| Numéro |
J. Phys. France
Volume 50, Numéro 9, mai 1989
|
|
|---|---|---|
| Page(s) | 1009 - 1013 | |
| DOI | https://doi.org/10.1051/jphys:019890050090100900 | |
J. Phys. France 50, 1009-1013 (1989)
DOI: 10.1051/jphys:019890050090100900
Centre for Theoretical Physics, Academy of Sciences of Vietnam, Nghia Do, Tu Liem, Ha Noi, Vietnam
4265P - Optical bistability, multistability, and switching, including local field effects.
7135 - Excitons and related phenomena.
Key words
excitons -- optical bistability -- semiconductors
DOI: 10.1051/jphys:019890050090100900
The dependence of the optical characteristics on light intensity in a semiconductor
Nguyen Ba An et Nguyen Trung DanCentre for Theoretical Physics, Academy of Sciences of Vietnam, Nghia Do, Tu Liem, Ha Noi, Vietnam
Abstract
The nonlinear optical characteristics of semiconductors are studied near the two-photon biexciton resonance. Optical bistability is shown to happen below this resonance at very low light intensities.
Résumé
Nous étudions les caractéristiques optiques non linéaires de semiconducteurs au voisinage de la résonance d'absorption de deux photons par un biexciton. Nous montrons que la bistabilité optique apparaît au-dessous de cette résonance à très faibles intensités de lumière.
4265P - Optical bistability, multistability, and switching, including local field effects.
7135 - Excitons and related phenomena.
Key words
excitons -- optical bistability -- semiconductors