Dislocations stopped by the Σ = 9 (122 ) grain boundary in Si. An HREM study of thermal activation J. Thibault-Desseaux, J.L. Putaux, A. Bourret et H.O.K. KirchnerJ. Phys. France, 50 18 (1989) 2525-2540DOI: https://doi.org/10.1051/jphys:0198900500180252500
