Electronic properties of hydrogenated amorphous silicon-germanium alloys
J. Phys. France, 44 6 (1983) 713-721
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DOI: 10.1002/pssb.2221260116
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DOI: 10.1080/13642818408227657
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DOI: 10.1063/1.96513
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DOI: 10.1016/0038-1098(85)90086-9
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