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Correlation of electrical and optical properties of the vanadium-related C level in silicon

R. Pässler, H. Pettersson, H. G. Grimmeiss and K. Schmalz
Physical Review B 55 (7) 4312 (1997)
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MAGNETO-CIRCULAR DICHROISM SPECTRA IN SEMI-INSULATING GaAs: Cr AND InP : Fe

K. SATO, T. IIJIMA, T. NAKAJIMA and S. KOBAYASHI
Journal of the Magnetics Society of Japan 11 (S_1_ISMO) S1_121 (1987)
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Double source optical absorption and spectral photoconductivity measurements in the extrinsic region of semiconductors

J. Pastrňák
Czechoslovak Journal of Physics 37 (8) 942 (1987)
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Interpretation of deep-level optical spectroscopy and deep-level transient spectroscopy data: Application to irradiation defects in GaAs

S. Loualiche, A. Nouailhat, G. Guillot and M. Lannoo
Physical Review B 30 (10) 5822 (1984)
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Absolute photoionization cross sections of the acceptor state level of chromium in indium phosphide

G. Bremond, G. Guillot, A. Nouailhat and G. Picoli
Journal of Applied Physics 59 (6) 2038 (1986)
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Transition-metal impurities in III-V compounds

B Clerjaud
Journal of Physics C: Solid State Physics 18 (19) 3615 (1985)
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Observation of the internal luminescence of Cr2+(3d4) in GaAs under hydrostatic pressure

B. Deveaud, G. Picoli, Y. Zhou and G. Martinez
Solid State Communications 46 (4) 359 (1983)
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Observation of a new chromium‐related complex in GaAs:Cr

B. Deveaud, B. Lambert, G. Picoli and G. Martinez
Journal of Applied Physics 55 (12) 4356 (1984)
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Luminescence processes at chromium in GaAs

B. Deveaud, G. Picoli, B. Lambert and G. Martinez
Physical Review B 29 (10) 5749 (1984)
DOI: 10.1103/PhysRevB.29.5749
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Deep level optical spectroscopy of the levels introduced by transition metals in GaAs

F. Litty, P. Leyral, S. Loualiche, et al.
Physica B+C 117-118 182 (1983)
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Alternative electronic parts for multiphonon-broadened photoionization cross sections of deep levels in SiC

Roland Pässler
Journal of Applied Physics 97 (11) 113533 (2005)
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The donor level of vanadium in InP

B. Deveaud, B. Plot, B. Lambert, et al.
Journal of Applied Physics 59 (9) 3126 (1986)
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Photoionization cross-section analysis for a deep trap contributing to current collapse in GaN field-effect transistors

Roland Pässler
Journal of Applied Physics 96 (1) 715 (2004)
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Properties of titanium in InP

G Bremond, G Guillot, A Nouailhat, et al.
Journal of Physics C: Solid State Physics 19 (24) 4723 (1986)
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Optical absorption coefficient of semiconductors in the extrinsic region obtained by photoconductivity measurements: application to SI GaAs

J Pastrnak, F Karel and O Petricek
Semiconductor Science and Technology 5 (8) 867 (1990)
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Nature of long-wavelength luminescence of ZnSe(Te):Zn

O. V. Vakulenko, V. D. Ryzhikov and B. M. Shutov
Journal of Applied Spectroscopy 49 (3) 940 (1988)
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The study of impurity levels in LEC semi-insulating GaAs:Cr samples by two-source photoconductivity measurements

J. Pastrňák, F. Karel, J. Oswald, W. Ulrici and N. M. Kolchanova
Physica Status Solidi (a) 99 (1) 225 (1987)
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Alternative Way for Detecting Franck-Condon Shifts from Thermally Broadened Photoneutralization Cross-Section Bands of Deep Traps in Semiconductors

R. Pässler
physica status solidi (b) 186 (2) K63 (1994)
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