The infrared spectrum of indium in silicon revisited
J. Phys. France, 43 12 (1982) 1789-1795
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158 281 (2009)
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https://doi.org/10.1007/978-3-7091-0597-9_5
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G. Piao, R. A. Lewis and P. FisherPhysical Review B 54 (3) 1741 (1996)
https://doi.org/10.1103/PhysRevB.54.1741
The interpretation of the p3/2spectra of group III acceptors in silicon
B Pajot, I L Beinikhes, Sh M Kogan, et al.Semiconductor Science and Technology 7 (9) 1162 (1992)
https://doi.org/10.1088/0268-1242/7/9/004
Practical Fourier Transform Infrared Spectroscopy
K. Krishnan, P.J. Stout and Masaharu WatanabePractical Fourier Transform Infrared Spectroscopy 285 (1990)
https://doi.org/10.1016/B978-0-12-254125-4.50011-2
Infrared Studies of the Double Acceptor Zinc in Silicon
A. Dörnen, R. Kienle, K. Thonke, et al.MRS Proceedings 163 (1989)
https://doi.org/10.1557/PROC-163-21
Bound-to-bound transitions at neutral zinc in silicon: Effective-mass-like states and hole-hole interaction
A. Dörnen, R. Kienle, K. Thonke, et al.Physical Review B 40 (17) 12005 (1989)
https://doi.org/10.1103/PhysRevB.40.12005
Neutral and ionized states of group III acceptors in silicon
G. F. Cerofolini and R. BezJournal of Applied Physics 61 (4) 1435 (1987)
https://doi.org/10.1063/1.338124
Effective mass-like states of the deep acceptor level of Au and Pt in silicon
G. Armelles, J. Barrau, M. Brousseau, B. Pajot and C. NaudSolid State Communications 56 (3) 303 (1985)
https://doi.org/10.1016/0038-1098(85)91016-6
Supershallow levels in indium-doped silicon
G. F. Cerofolini, G. U. Pignatel, E. Mazzega and G. OttavianiJournal of Applied Physics 58 (6) 2204 (1985)
https://doi.org/10.1063/1.335988
Neutron Transmutation Doping of Semiconductor Materials
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https://doi.org/10.1007/978-1-4613-2695-3_19