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Article cité :
D. Pons , S. Makram-Ebeid
J. Phys. France, 40 12 (1979) 1161-1172
Citations de cet article :
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Deep centers in gallium arsenide associated with intrinsic structural defects
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A. Zylberstejn Physica B+C 117-118 44 (1983) https://doi.org/10.1016/0378-4363(83)90437-0
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P. Pipinys, A. Proskura and A. Rimeika physica status solidi (a) 72 (2) 511 (1982) https://doi.org/10.1002/pssa.2210720210
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S. J. Pearton physica status solidi (b) 105 (1) (1981) https://doi.org/10.1002/pssb.2221050158
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A. Mircea-Roussel and S. Makram-Ebeid Applied Physics Letters 38 (12) 1007 (1981) https://doi.org/10.1063/1.92247
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Energy dependence of deep level introduction in electron irradiated GaAs
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