Journal de Physique

Emission rate dependence on the electric field for two trap levels in proton-irradiatedn-type GaAs

A. V. P. Coelho and H. Boudinov
Physical Review B 77 (23) 235210 (2008)
DOI: 10.1103/PhysRevB.77.235210
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Field dependent emission rates in radiation damaged GaAs

R. M. Fleming, S. M. Myers, W. R. Wampler, et al.
Journal of Applied Physics 116 (1) 013710 (2014)
DOI: 10.1063/1.4885156
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Energy dependence of deep level introduction in electron irradiated GaAs

D. Pons, P. M. Mooney and J. C. Bourgoin
Journal of Applied Physics 51 (4) 2038 (1980)
DOI: 10.1063/1.327923
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Phonon-Assisted Tunneling from Z 1/Z 2 in 4H-SiC

A. O. Evwaraye
Journal of Electronic Materials 39 (6) 751 (2010)
DOI: 10.1007/s11664-010-1132-5
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The effects of deep levels in GaAs MESFETs

A. Zylberstejn
Physica B+C 117-118 44 (1983)
DOI: 10.1016/0378-4363(83)90437-0
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Temperature Dependence of Electroluminescence in CdF2 Thin Films Doped with Rare Earth

P. Pipinys, A. Kiveris and A. Rimeika
Physica Status Solidi (a) 77 (2) 471 (1983)
DOI: 10.1002/pssa.2210770208
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A generalized theory for determining the field‐enhanced thermal emission rate by the reverse pulsed deep‐level transient spectroscopy

Ghung G. Choi and Sheng S. Li
Journal of Applied Physics 60 (1) 189 (1986)
DOI: 10.1063/1.337672
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Native defects in gallium arsenide

J. C. Bourgoin, H. J. von Bardeleben and D. Stiévenard
Journal of Applied Physics 64 (9) R65 (1988)
DOI: 10.1063/1.341206
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Electric-Field-Induced Phonon-Assisted Tunnel Ionization from Deep Levels in Semiconductors

S. Makram-Ebeid and M. Lannoo
Physical Review Letters 48 (18) 1281 (1982)
DOI: 10.1103/PhysRevLett.48.1281
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Physics-based modeling and experimental implications of trap-assisted tunneling in InGaN/GaN light-emitting diodes

Marco Mandurrino, Giovanni Verzellesi, Michele Goano, et al.
physica status solidi (a) 212 (5) 947 (2015)
DOI: 10.1002/pssa.201431743
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Semiconductors and Semimetals

G.F. Neumark and K. Kosai
Semiconductors and Semimetals 19 1 (1983)
DOI: 10.1016/S0080-8784(08)60274-4
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Comparison of two models for phonon assisted tunneling field enhanced emission from defects in Ge measured by DLTS

J. Pienaar, W.E. Meyer, F.D. Auret and S.M.M. Coelho
Physica B: Condensed Matter 407 (10) 1641 (2012)
DOI: 10.1016/j.physb.2011.09.106
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Electrical Defect Analysis Following Pulsed Laserirradiation of Unimplanted GaAs

D. Pribat, S. Delage, D. Dieumegard, et al.
MRS Proceedings 13 647 (1982)
DOI: 10.1557/PROC-13-647
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Behavior of InP:Fe under high electric field

K. Turki, G. Picoli and J. E. Viallet
Journal of Applied Physics 73 (12) 8340 (1993)
DOI: 10.1063/1.353426
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Radiation‐induced traps in low‐energy proton‐irradiated GaAs solar cells

Michel Roux and Philippe André
Journal of Applied Physics 57 (12) 5192 (1985)
DOI: 10.1063/1.335255
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A luminescence band associated with the main electron trap in bulk gallium arsenide

A. Mircea‐Roussel and S. Makram‐Ebeid
Applied Physics Letters 38 (12) 1007 (1981)
DOI: 10.1063/1.92247
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Leakage Current Characteristics of Nitride-Based InGaN Light-Emitting Diode

Kyu-Sang Kim, Jin-Ha Kim and S. N. Cho
IEEE Photonics Technology Letters 23 (8) 483 (2011)
DOI: 10.1109/LPT.2011.2109705
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Optimization and preservation of deep‐level transient spectroscopy signal response

H. Thomas
Journal of Applied Physics 57 (10) 4619 (1985)
DOI: 10.1063/1.335370
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Electric field enhancement of electron emission rates from Z1/2 centers in 4H-SiC

A. O. Evwaraye, S. R. Smith, W. C. Mitchel and G. C. Farlow
Journal of Applied Physics 106 (6) 063702 (2009)
DOI: 10.1063/1.3224872
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Quantum model for phonon-assisted tunnel ionization of deep levels in a semiconductor

S. Makram-Ebeid and M. Lannoo
Physical Review B 25 (10) 6406 (1982)
DOI: 10.1103/PhysRevB.25.6406
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Transient capacitance spectroscopy in heavily compensated semiconductors

D. Stiévenard, M. Lannoo and J.C. Bourgoin
Solid-State Electronics 28 (5) 485 (1985)
DOI: 10.1016/0038-1101(85)90112-1
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An analysis of the charge-transport mechanisms defining the reverse current-voltage characteristics of the metal-GaAs barriers

S. V. Bulyarskii and A. V. Zhukov
Semiconductors 35 (5) 539 (2001)
DOI: 10.1134/1.1371618
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Electron emission properties of a defect at ∼(Ec−0.23eV) in impurity-free disordered n-GaAs

P.N.K. Deenapanray, W.E. Meyer, F.D. Auret, M. Krispin and C. Jagadish
Physica B: Condensed Matter 340-342 315 (2003)
DOI: 10.1016/j.physb.2003.09.084
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Transient-current study of field-assisted emission from shallow levels in silicon

E. Rosencher, V. Mosser and G. Vincent
Physical Review B 29 (3) 1135 (1984)
DOI: 10.1103/PhysRevB.29.1135
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Ion irradiation damage inn‐type GaAs in comparison with its electron irradiation damage

F. H. Eisen, K. Bachem, E. Klausman, K. Koehler and R. Haddad
Journal of Applied Physics 72 (12) 5593 (1992)
DOI: 10.1063/1.351958
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Electrical field effect on both thermal ionization energy and optical threshold energy of the Cr3+/4+ deep donor level in GaP

R Ajjel, M.A Zaı̈di, H Maaref, et al.
Materials Science and Engineering: C 21 (1-2) 303 (2002)
DOI: 10.1016/S0928-4931(02)00088-7
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Deep levels introduced during electron‐beam deposition of metals onn‐type silicon

F. D. Auret and P. M. Mooney
Journal of Applied Physics 55 (4) 988 (1984)
DOI: 10.1063/1.333155
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Temperature Dependence of Electroluminescence in ZnS Ceramics

P. Pipinys, A. Proskura and A. Rimeika
physica status solidi (a) 72 (2) 511 (1982)
DOI: 10.1002/pssa.2210720210
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Identification of Defects in Semiconductors

P.M. Mooney
Semiconductors and Semimetals, Identification of Defects in Semiconductors 51 93 (1999)
DOI: 10.1016/S0080-8784(08)62975-0
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Negative capacitance in switching MISS devices

J. Millán, V. Villaronga, J.R. Morante, F. Serra-Mestres and A. Herms
Physica B+C 129 (1-3) 351 (1985)
DOI: 10.1016/0378-4363(85)90600-X
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Electrical field effect on the optical threshold energy of donor and acceptor levels in chromium-doped GaP

R Ajjel, M.A Zaı̈di, H Maaref, et al.
Physica B: Condensed Matter 336 (3-4) 362 (2003)
DOI: 10.1016/S0921-4526(03)00312-0
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Deep-level optical spectroscopy in GaAs

A. Chantre, G. Vincent and D. Bois
Physical Review B 23 (10) 5335 (1981)
DOI: 10.1103/PhysRevB.23.5335
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Calculation of the probability of nonradiative electronic transitions from deep centers in GaAs in the one-coordinate approximation

S. V. Bulyarskiĭ, N. S. Grushko and A. V. Zhukov
Optics and Spectroscopy 90 (3) 381 (2001)
DOI: 10.1134/1.1358446
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Defect studies of electrothermal stress of InP metal‐oxide‐semiconductor structures

C. C. Tin and P. A. Barnes
Journal of Applied Physics 66 (1) 223 (1989)
DOI: 10.1063/1.343910
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Persistent photocurrent (PPC) in solution-processed organic thin film transistors: Mechanisms of gate voltage control

Subhash Singh and Y. N. Mohapatra
Journal of Applied Physics 120 (4) 045501 (2016)
DOI: 10.1063/1.4959823
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Identification of a deep electron trap in GaP:N

G. Ferenczi, T. Pavelka and M. Somogyi
Physica B+C 116 (1-3) 436 (1983)
DOI: 10.1016/0378-4363(83)90287-5
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Transition mechanisms of two interactingDXcenters inN‐type AlGaAs using reverse‐bias deep level transient spectroscopy and temperature‐dependent pulse‐width reverse‐bias deep level transient spectroscopy methods

C. W. Wang and C. H. Wu
Journal of Applied Physics 74 (6) 3921 (1993)
DOI: 10.1063/1.354491
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Calculation of the field dependence of the rates of emission of carriers from deep centers based on an experimental form-function for the optical transition

S. V. Bulyarskii, N. S. Grushko and A. V. Zhukov
Journal of Experimental and Theoretical Physics 89 (3) 547 (1999)
DOI: 10.1134/1.559013
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Deep Level Transient Spectroscopy of Defects in High-Energy Light-Particle Irradiated Si

F. Danie Auret and Prakash N.K. Deenapanray
Critical Reviews in Solid State and Materials Sciences 29 (1) 1 (2004)
DOI: 10.1080/10408430490442458
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Pressure-induced negative charge state of theEL2 defect in its metastable configuration

Michał Baj, Piotr Dreszer and Adam Babiński
Physical Review B 43 (3) 2070 (1991)
DOI: 10.1103/PhysRevB.43.2070
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Field dependence of the rate of thermal emission of holes from the V Ga S As complex in gallium arsenide

S. V. Bulyarskii, N. S. Grushko and A. V. Zhukov
Semiconductors 34 (1) 40 (2000)
DOI: 10.1134/1.1187958
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Semiclassical simulation of trap-assisted tunneling in GaN-based light-emitting diodes

Marco Mandurrino, Michele Goano, Marco Vallone, et al.
Journal of Computational Electronics 14 (2) 444 (2015)
DOI: 10.1007/s10825-015-0675-3
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IMPATT oscillations in fast recovery diodes due to temporarily charged radiation-induced deep levels

J. Lutz, W. Südkamp and W. Gerlach
Solid-State Electronics 42 (6) 931 (1998)
DOI: 10.1016/S0038-1101(98)00114-2
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Deep-level transient spectroscopy of interfacial states in “buffer-free” p-i-n GaSb/GaAs devices

Mohsin Aziz, Philippe Ferrandis, Abdelmadjid Mesli, et al.
Journal of Applied Physics 114 (13) 134507 (2013)
DOI: 10.1063/1.4824378
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Effect of electric field on deep‐level transients in GaAs and GaP

S. Makram‐Ebeid
Applied Physics Letters 37 (5) 464 (1980)
DOI: 10.1063/1.91966
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Role of defects in the thermal droop of InGaN-based light emitting diodes

C. De Santi, M. Meneghini, M. La Grassa, et al.
Journal of Applied Physics 119 (9) 094501 (2016)
DOI: 10.1063/1.4942438
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Thermal and electric field induced defects in InP metal‐insulator‐semiconductor structures

C. C. Tin, P. A. Barnes and W. C. Neely
Applied Physics Letters 53 (20) 1940 (1988)
DOI: 10.1063/1.100329
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Photoionization cross section ratio of nitrogen-site carbon in GaN under sub-bandgap-light irradiation determined by isothermal capacitance transient spectroscopy

Kazutaka Kanegae, Tetsuo Narita, Kazuyoshi Tomita, Tetsu Kachi, Masahiro Horita, Tsunenobu Kimoto and Jun Suda
Applied Physics Express 14 (9) 091004 (2021)
DOI: 10.35848/1882-0786/ac16ba
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Influence of a 3D electric field enhancement model on the Monte Carlo calculation of the dark current in pixel arrays

K. Lemière, C. Inguimbert and T. Nuns
Journal of Applied Physics 128 (16) 164502 (2020)
DOI: 10.1063/5.0003613
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Irradiation-induced defects in GaAs

D Pons and J C Bourgoin
Journal of Physics C: Solid State Physics 18 (20) 3839 (1985)
DOI: 10.1088/0022-3719/18/20/012
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Poole-Frenkel-assisted emission from deep levels in electron-irradiated germanium

M A Zaidi, J C Bourgoin and H Maaref
Semiconductor Science and Technology 4 (9) 739 (1989)
DOI: 10.1088/0268-1242/4/9/006
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Electric field effect on electron emission from the DX centre in GaAlAs

M Zazoui, S L Feng and J C Bougoin
Semiconductor Science and Technology 6 (10) 973 (1991)
DOI: 10.1088/0268-1242/6/10/004
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Electric-field-enhanced emission and annealing behaviour of electron traps introduced in n-Si by low-energy He ion bombardment

P N K Deenapanray, W E Meyer and F D Auret
Semiconductor Science and Technology 14 (1) 41 (1999)
DOI: 10.1088/0268-1242/14/1/005
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Electric-field-enhanced emission from radiation-induced hole traps in p-GaAs

F D Auret, S A Goodman and W E Meyer
Semiconductor Science and Technology 10 (10) 1376 (1995)
DOI: 10.1088/0268-1242/10/10/012
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Impact of band to band tunneling in In0.53Ga0.47As tunnel diodes on the deep level transient spectra

S. Gupta, E. Simoen, R. Loo, et al.
Applied Physics Letters 113 (23) 232101 (2018)
DOI: 10.1063/1.5058201
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DLTS investigation of deep levels in bulk GaAs under uniaxial stress

C A Londos and T Pavelka
Semiconductor Science and Technology 5 (11) 1100 (1990)
DOI: 10.1088/0268-1242/5/11/005
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Deep centers in gallium arsenide associated with intrinsic structural defects

B. I. Boltaks, M. N. Kolotov and E. A. Skoryatina
Soviet Physics Journal 26 (10) 919 (1983)
DOI: 10.1007/BF00896646
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Non-Exponential Capacitance Transient Due to Field-Enhanced Emission of Electrons from Deep Traps

B. Olejníková
Physica Status Solidi (a) 84 (2) 621 (1984)
DOI: 10.1002/pssa.2210840235
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Defect characterization of n-type Si1−xGex after 1.0 kev helium-ion etching

S. A. Goodman, F. D. Auret, K. Nauka and J. B. Malherbe
Journal of Electronic Materials 26 (5) 463 (1997)
DOI: 10.1007/s11664-997-0120-x
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Magnetic Field Dependence of Defect State in GaAs

S. J. Pearton
physica status solidi (b) 105 (1) K19 (1981)
DOI: 10.1002/pssb.2221050158
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Defect pairs and clusters related to the EL2 centre in GaAs

Sherif Makram-Ebeid and P. Boher
Revue de Physique Appliquée 23 (5) 847 (1988)
DOI: 10.1051/rphysap:01988002305084700
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Calculation of field-induced phonon-assisted tunnel ionization of deep centres in GaAs using the quantum defect method

B. Olejníková
Czechoslovak Journal of Physics 35 (5) 585 (1985)
DOI: 10.1007/BF01595474
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Evidence for defect-assisted tunneling and recombination at extremely low current in InGaN/GaN-based LEDs

Carlo De Santi, Matteo Buffolo, Nicola Renso, et al.
Applied Physics Express 12 (5) 052007 (2019)
DOI: 10.7567/1882-0786/ab10e3
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Managing Green Emission in Coupled InGaN QW–QDs Nanostructures via Nanoengineering

Z. C. Su, Z. L. Wang, J. D. Yu, Y. Yi, M. Z. Wang, L. Wang, Y. Luo, J. N. Wang and S. J. Xu
The Journal of Physical Chemistry C 121 (40) 22523 (2017)
DOI: 10.1021/acs.jpcc.7b07826
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Point Defects in Semiconductors II

Jacques Bourgoin and Michel Lannoo
Springer Series in Solid-State Sciences, Point Defects in Semiconductors II 35 154 (1983)
DOI: 10.1007/978-3-642-81832-5_6
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Kinetic Monte Carlo Simulations of Defects in Anatase Titanium Dioxide

Benedikt Weiler, Alessio Gagliardi and Paolo Lugli
The Journal of Physical Chemistry C 120 (18) 10062 (2016)
DOI: 10.1021/acs.jpcc.6b01687
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Depth profiles of electron traps generated during reactive ion etching in n-type 4H-SiC characterized by using isothermal capacitance transient spectroscopy

Kazutaka Kanegae, Takafumi Okuda, Masahiro Horita, Jun Suda and Tsunenobu Kimoto
Journal of Applied Physics 130 (10) 105703 (2021)
DOI: 10.1063/5.0059588
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Stability and degradation of isolation and surface in Ga2O3 devices

C. De Santi, A. Nardo, M.H. Wong, et al.
Microelectronics Reliability 100-101 113453 (2019)
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Rectification ratio and direction controlled by temperature in copper phthalocyanine ensemble molecular diodes

Carolina Sergi Lopes, Leandro Merces, Rafael Furlan de Oliveira, Davi Henrique Starnini de Camargo and Carlos César Bof Bufon
Nanoscale 12 (18) 10001 (2020)
DOI: 10.1039/C9NR10601D
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Thermal droop in III-nitride based light-emitting diodes: Physical origin and perspectives

Matteo Meneghini, Carlo De Santi, Alberto Tibaldi, et al.
Journal of Applied Physics 127 (21) 211102 (2020)
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Francesco Bertazzi, Stefano Dominici, Marco Mandurrino, Dipika Robidas, Xiangyu Zhou, Marco Vallone, Marco Calciati, Pierluigi Debernardi, Giovanni Verzellesi, Matteo Meneghini, Enrico Bellotti, Giovanni Ghione and Michele Goano
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Carlo De Santi, Arianna Nardo, Man Hoi Wong, Ken Goto, Akito Kuramata, Shigenobu Yamakoshi, Hisashi Murakami, Yoshinao Kumagai, Masataka Higashiwaki, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, Ferechteh H. Teherani, David C. Look and David J. Rogers
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Phonon assisted tunnel emission of electrons from deep levels in GaAs

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