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Si (111) surface topography after Ar/sup +/ ion bombardment and thermal annealing
Topographie de surfaces Si(111) après bombardement d'ions Ar+ et recuit thermique

J. Fauré, A. Claverie, C. Vieu, J. Beauvillain

J. Phys. France, 48 7 (1987) 1161-1170

DOI: https://doi.org/10.1051/jphys:019870048070116100

Citations de cet article :

Degradation, amorphization, and recrystallization of ion bombarded si(111) surfaces studied by in situ reflection electron microscopy and reflection high energy electron diffraction techniques

A. Claverie, J. Beauvillain, J. Fauré, C. Vieu and B. Jouffrey
Microscopy Research and Technique 20 (4) 352 (1992)
https://doi.org/10.1002/jemt.1070200406

Argon-induced Auger emission from amorphous and crystalline silicon: A comparison between experiment and simulation

M. Hou, C. Benazeth, P. Hecquet and N. Benazeth
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 48 (1-4) 625 (1990)
https://doi.org/10.1016/0168-583X(90)90197-3

Roughness induced at Si(111) surfaces by high temperature heating

Y. Borensztein, T. Lopez-Rios and G. Vuye
Applied Surface Science 41-42 439 (1990)
https://doi.org/10.1016/0169-4332(89)90099-8

Temperature dependence of ion-induced auger electron emission from (111) silicon: I. Experiments

C. Benazeth, P. Hecquet, C. Mayoral and N. Benazeth
Radiation Effects and Defects in Solids 108 (2-4) 227 (1989)
https://doi.org/10.1080/10420158908230311

Cross-sectional high-resolution electron microscopy investigation of argon-ion implantation-induced amorphization of silicon

A. Claverie, C. Vieu, J. Fauré and J. Beauvillain
Journal of Applied Physics 64 (9) 4415 (1988)
https://doi.org/10.1063/1.341264