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Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors

Mustafa Kurban, Osman Barış Malcıoğlu and Şakir Erkoç
Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors 87 (2023)
https://doi.org/10.1007/978-3-031-19531-0_4

Introduce of ZnxHg(1−x)Te as a room temperature photo-detector:ab initiocalculations of the electronic structure and charge carrier transport

Ghasemi Hasan, Mokhtari Ali and Soleimanian Vishtasb
Materials Research Express 5 (1) 015910 (2018)
https://doi.org/10.1088/2053-1591/aaa740

A model of enhanced STM current due to semiconductor optical absorption

J.D. Patterson, J. Blatt, J. Burns, J.G. Mantovan and R.P. Raffaelle
Journal of Physics and Chemistry of Solids 63 (2) 257 (2002)
https://doi.org/10.1016/S0022-3697(01)00138-X

Scanning tunneling optical spectroscopy in mercury cadmium telluride and related compounds

Jianzhong Li, J.G. Mantovani and J.D. Patterson
Infrared Physics & Technology 40 (6) 463 (1999)
https://doi.org/10.1016/S1350-4495(99)00033-X

Electrical characterization of the p-Hg1−xZnxTe interface after anodic sulfidization treatments

O. Rousière, D. Lemoine, A. Quémerais, et al.
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 16 (4) 2300 (1998)
https://doi.org/10.1116/1.581344

Multimode nature and magnetophonon resonance of quaternary solid solutions of zinc, cadmium, and mercury tellurides

E. M. Sheregii, J. Cebulski, J. Polit, V. I. Ivanov-Omskii and W. Gebicki
Semiconductors 32 (8) 901 (1998)
https://doi.org/10.1134/1.1187481

Intrinsic carrier concentration and electron effective mass in Hg1−xZnxTe

Yi-Gao Sha, Ching-Hua Su and S. L. Lehoczky
Journal of Applied Physics 81 (5) 2245 (1997)
https://doi.org/10.1063/1.364289

Critical point parameters deduced from the dielectric function in HgZnTe and CdZnTe alloys

O. Castaing, J.T. Benhlal, R. Granger and R. Triboulet
Journal of Crystal Growth 159 (1-4) 1112 (1996)
https://doi.org/10.1016/0022-0248(95)00874-8

Optical characterization of Hg1 − xZnxTe crystals grown by the travelling heater method

C.C. Wu, D.Y. Chu, C.Y. Sun and T.R. Yang
Materials Chemistry and Physics 40 (1) 7 (1995)
https://doi.org/10.1016/0254-0584(94)01448-P

Composition profiles versus growth pressure and temperature in epitaxial HgZnTe layers

Z. Jakšić, Z. Djurić, Z. Djinović and R. Petrović
Physica Status Solidi (a) 152 (2) 451 (1995)
https://doi.org/10.1002/pssa.2211520213

Thermal Expansion Coefficient and Bond Strength in Hg1−xCdxTe and Hg1−xZnxTe

D. Bagot, R. Granger and S. Rolland
physica status solidi (b) 177 (2) 295 (1993)
https://doi.org/10.1002/pssb.2221770205

Free-carrier magneto-absorption in HgZnTe-CdTe and HgTe-CdTe superlattices

J Manasses, Y Guldner, J P Vieren and J P Faurie
Semiconductor Science and Technology 8 (1S) S156 (1993)
https://doi.org/10.1088/0268-1242/8/1S/035

Temperature-dependent band structure ofHg1−xZnxTe-CdTe superlattices

J. Manassès, Y. Guldner, J. P. Vieren, M. Voos and J. P. Faurie
Physical Review B 44 (24) 13541 (1991)
https://doi.org/10.1103/PhysRevB.44.13541

Disorder effects on the density of states of the II-VI semiconductor alloysHg0.5Cd0.5Te,Cd0.5Zn0.5Te, andHg0.5Zn0.5Te

Su-Huai Wei and Alex Zunger
Physical Review B 43 (2) 1662 (1991)
https://doi.org/10.1103/PhysRevB.43.1662

Properties of Hg1−x Zn x Te solid solutions

A. M. Abo El-Soud, F. El Akkad, S. Hammad and N. A. Ali
Journal of Materials Science: Materials in Electronics 2 (3) 171 (1991)
https://doi.org/10.1007/BF00696294

Transport and magneto-optical properties of HgZnTe-CdTe superlattices

J Manasses, J m Berroir, Y Guldner, J P Vieren and J P Faurie
Semiconductor Science and Technology 6 (12C) C80 (1991)
https://doi.org/10.1088/0268-1242/6/12C/015

Condensed Systems of Low Dimensionality

Y. Guldner, J. Manassès, J. P. Vieren, M. Voos and J. P. Faurie
NATO ASI Series, Condensed Systems of Low Dimensionality 253 97 (1991)
https://doi.org/10.1007/978-1-4684-1348-9_9

Study of p-to-n-type conversion in bulk Hg1-xZnxTe near x = 0.15

R. Granger, A. Lasbley, A. Seyni, S. Rolland and R. Triboulet
Journal of Crystal Growth 101 (1-4) 241 (1990)
https://doi.org/10.1016/0022-0248(90)90974-P

Photoluminescence studies on Zn-Rich Hg1−xZnxTe single crystals and composition determination

H.W. Jeon, J.H. Lee, K.S. Lim, et al.
Solid State Communications 74 (8) 817 (1990)
https://doi.org/10.1016/0038-1098(90)90941-4

XPS study of the ZnxHg1−xTe alloys: Core levels and valence-band offset

A. Marbeuf, D. Ballutaud, R. Triboulet and Y. Marfaing
Journal of Crystal Growth 101 (1-4) 608 (1990)
https://doi.org/10.1016/0022-0248(90)91046-S

First design and characterization of HgZnTe optical waveguides

A. Azema, P. Gaucherel, J. C. Roustan, R. Granger and R. Triboulet
Journal of Applied Physics 68 (12) 6029 (1990)
https://doi.org/10.1063/1.347189

The performance of Hg1−x Zn x Te photodiodes

A. Rogalski, J. Rutkowski, K. Jóźwikowski, J. Piotrowski and Z. Nowak
Applied Physics A Solids and Surfaces 50 (4) 379 (1990)
https://doi.org/10.1007/BF00323595

Composition dependence of thermal vibrations in Hg1−xZnxTe solid solutions determined by X-Ray diffraction

J.L. Baudour, M.M. Granger, L. Toupet, R. Granger and R. Triboulet
Journal of Physics and Chemistry of Solids 50 (3) 309 (1989)
https://doi.org/10.1016/0022-3697(89)90493-9

Metal submonolayers on Hg-Zn-Te alloys: Electrochemical and electrolyte electroreflectance studies

C. Nguyen Van Huong and P. Lemasson
Physical Review B 40 (5) 3021 (1989)
https://doi.org/10.1103/PhysRevB.40.3021

Growth and Optical Properties of Wide-Gap II–VI Low-Dimensional Semiconductors

Philippe Lemasson and Chau Nguyen Van Huong
NATO ASI Series, Growth and Optical Properties of Wide-Gap II–VI Low-Dimensional Semiconductors 200 87 (1989)
https://doi.org/10.1007/978-1-4684-5661-5_9

EXAFs and XPS studies of Hg1−xZnxTe: Determination of local atomic structure and valence band maximum

A. Marbeuf, D. Ballutaud, R. Triboulet, et al.
Journal of Physics and Chemistry of Solids 50 (9) 975 (1989)
https://doi.org/10.1016/0022-3697(89)90050-4

ZnHgTe as a material for ambient temperature 10.6 μm photodetectors

Jozef Piotrowski, Krzysztof Adamiec, Andrzej Maciak and Zenon Nowak
Applied Physics Letters 54 (2) 143 (1989)
https://doi.org/10.1063/1.101210

Electrical characterization of as-grown, annealed and indium-doped Hg1-xZnxTe for x near 0.15

S. Rolland, A. Lasbley, A. Seyni, R. Granger and R. Triboulet
Revue de Physique Appliquée 24 (8) 795 (1989)
https://doi.org/10.1051/rphysap:01989002408079500

Intrinsic carrier concentrations and effective masses in the potential infrared detector material, Hg1−xZnxTe

K. Józwikowski and A. Rogalski
Infrared Physics 28 (2) 101 (1988)
https://doi.org/10.1016/0020-0891(88)90029-2

Carrier concentration and transport in Hg1−xZnxTe for x near 0.15

R. Granger, A. Lasbley, S. Rolland, C.M. Pelletier and R. Triboulet
Journal of Crystal Growth 86 (1-4) 682 (1988)
https://doi.org/10.1016/0022-0248(90)90795-M