La fonctionnalité Article cité par… liste les citations d'un article. Ces citations proviennent de la base de données des articles de EDP Sciences, ainsi que des bases de données d'autres éditeurs participant au programme CrossRef Cited-by Linking Program . Vous pouvez définir une alerte courriel pour être prévenu de la parution d'un nouvel article citant " cet article (voir sur la page du résumé de l'article le menu à droite).
Article cité :
B. Etienne , E. Paris
J. Phys. France, 48 12 (1987) 2049-2052
Citations de cet article :
43 articles
Structural design and molecular beam epitaxy growth of GaAs and InAs heterostructures for high mobility two-dimensional electron gas
Tiantian Wang, Huading Song and Ke He Quantum Frontiers 3 (1) (2024) https://doi.org/10.1007/s44214-024-00061-5
Understanding limits to mobility in ultrahigh-mobility GaAs two-dimensional electron systems: 100 million
cm2/Vs
and beyond
Yoon Jang Chung, A. Gupta, K. W. Baldwin, et al. Physical Review B 106 (7) (2022) https://doi.org/10.1103/PhysRevB.106.075134
Molecular Beam Epitaxy
V. Umansky and M. Heiblum Molecular Beam Epitaxy 121 (2013) https://doi.org/10.1016/B978-0-12-387839-7.00006-3
Effect of carriers transfer behavior on the optical properties of InAs quantum dots embedded in AlGaAs/GaAs heterojunction
H. Khmissi, L. Sfaxi, L. Bouzaïene, et al. Journal of Applied Physics 107 (7) (2010) https://doi.org/10.1063/1.3371356
In-situ crystal growth monitoring using a CCD imaging system
H. Sghaier, L. Bouzaiene, L. Sfaxi and H. Maaref Sensors and Actuators A: Physical 121 (1) 95 (2005) https://doi.org/10.1016/j.sna.2004.12.001
Unreconstructed As atoms mixed with(3×2)cells and(6×6)supercells in low As pressure epitaxy on GaAs(001)
David Martrou, Antonella Cavanna, Franck Natali, Ulf Gennser and Bernard Etienne Physical Review B 72 (24) (2005) https://doi.org/10.1103/PhysRevB.72.241307
RHEED digital image analysis system for in-situ growth rate and alloy composition measurements of GaAs-based nanostructures
H. Sghaier Semiconductor Physics, Quantum Electronics and Optoelectronics 7 (2) 147 (2004) https://doi.org/10.15407/spqeo7.02.147
Handbook of Thin Films
Nicola Pinto and Roberto Murri Handbook of Thin Films 439 (2002) https://doi.org/10.1016/B978-012512908-4/50074-6
Electron confinement in planar-doped heterostructures AlxGa1−xAs:δSi/GaAs
S. Aloulou, H. Ajlani, A. Meftah, et al. Materials Science and Engineering: B 96 (1) 14 (2002) https://doi.org/10.1016/S0921-5107(02)00269-6
High Magnetic Fields
D. C. Glattli Lecture Notes in Physics, High Magnetic Fields 595 1 (2002) https://doi.org/10.1007/3-540-45649-X_1
Aspects topologiques de la physique en basse dimension. Topological aspects of low dimensional systems
M. Shayegan Les Houches - Ecole d’Ete de Physique Theorique, Aspects topologiques de la physique en basse dimension. Topological aspects of low dimensional systems 69 1 (1999) https://doi.org/10.1007/3-540-46637-1_1
Enhanced electron density in two Si δ-doped Al0.33Ga0.67As/GaAs heterojunctions
L. Sfaxi, L. Bouzaı̈ene and H. Maaref Microelectronics Journal 30 (8) 769 (1999) https://doi.org/10.1016/S0026-2692(98)00167-0
Study of factors limiting electron mobility in InSb quantum wells
S. J. Chung, K. J. Goldammer, S. C. Lindstrom, M. B. Johnson and M. B. Santos Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 17 (3) 1151 (1999) https://doi.org/10.1116/1.590712
MBE growth of two-dimensional electron gases on (110) GaAs
C.B. Sørensen, H. Gislason and J.M. Hvam Journal of Crystal Growth 175-176 1097 (1997) https://doi.org/10.1016/S0022-0248(96)00964-5
Perspectives in Quantum Hall Effects
M. Shayegan Perspectives in Quantum Hall Effects 343 (1996) https://doi.org/10.1002/9783527617258.ch9
Characteristics of AlGaAs/GaAs heterostructures grown by migration-enhanced epitaxy at high temperatures
M Kawashima, T Saku and Y Horikoshi Semiconductor Science and Technology 10 (9) 1237 (1995) https://doi.org/10.1088/0268-1242/10/9/006
Two-dimensional electron-gas mobility in GaAs/AlxGa1−xAs: Deformation-potential study including hydrostatic-pressure effects
I. Gorczyca and J. Krupski Physical Review B 52 (15) 11248 (1995) https://doi.org/10.1103/PhysRevB.52.11248
Physics of Low-Dimensional Semiconductor Structures
E. Y. Andrei, F. J. B. Williams, D. C. Glattli and G. Deville Physics of Low-Dimensional Semiconductor Structures 499 (1993) https://doi.org/10.1007/978-1-4899-2415-5_14
Migration-enhanced epitaxy of GaAs and AlGaAs
Y Horikoshi Semiconductor Science and Technology 8 (6) 1032 (1993) https://doi.org/10.1088/0268-1242/8/6/010
Optimization of optical properties of GaAs/GaAlAs quantum wells grown by high temperature migration enhanced epitaxy
F. Laruelle and J. Bloch Journal of Crystal Growth 127 (1-4) 774 (1993) https://doi.org/10.1016/0022-0248(93)90730-K
Epitaxial growth of III–V compound semiconductor thin films and their device applications
Yoshiji Horikoshi Progress in Crystal Growth and Characterization of Materials 23 73 (1992) https://doi.org/10.1016/0960-8974(92)90020-Q
Low-Dimensional Electronic Systems
M. Shayegan Springer Series in Solid-State Sciences, Low-Dimensional Electronic Systems 111 199 (1992) https://doi.org/10.1007/978-3-642-84857-5_18
Deformation potential in a high-electron-mobility GaAs/Ga0.7Al0.3As heterostructure: Hydrostatic-pressure studies
I. Gorczyca, T. Suski, E. Litwin-Staszewska, et al. Physical Review B 46 (7) 4328 (1992) https://doi.org/10.1103/PhysRevB.46.4328
High Electron Mobility in AlGaAs/GaAs Modulation-Doped Structures
Tadashi Saku, Yoshiro Hirayama Yoshiro Hirayama and Yoshiji Horikoshi Yoshiji Horikoshi Japanese Journal of Applied Physics 30 (5R) 902 (1991) https://doi.org/10.1143/JJAP.30.902
Electron crystallization in two dimensions
D.C. Glattli, E.Y. Andrei, R.G. Clark, et al. Physica B: Condensed Matter 169 (1-4) 328 (1991) https://doi.org/10.1016/0921-4526(91)90247-C
Conduction threshold and pinning frequency of magnetically induced Wigner solid
F. I. B. Williams, P. A. Wright, R. G. Clark, et al. Physical Review Letters 66 (25) 3285 (1991) https://doi.org/10.1103/PhysRevLett.66.3285
Realization of high mobilities at ultralow electron density in GaAs-Al0.3Ga0.7As inverted heterojunctions
Dojin Kim, A. Madhukar, Ke-Zhong Hu and Wei Chen Applied Physics Letters 56 (19) 1874 (1990) https://doi.org/10.1063/1.103074
Experiments on ordering in classical and quantum 2D electron systems
D.C. Glattli, G. Deville, V. Duburcq, et al. Surface Science 229 (1-3) 344 (1990) https://doi.org/10.1016/0039-6028(90)90902-K
Localization and Confinement of Electrons in Semiconductors
F. I. B. Williams, E. Y. Andrei, R. G. Clark, et al. Springer Series in Solid-State Sciences, Localization and Confinement of Electrons in Semiconductors 97 192 (1990) https://doi.org/10.1007/978-3-642-84272-6_21
Modulation Doped GaAs with Electron Mobilities Exceeding 107cm2/V sec
Loren Pfeiffer, K. W. West, H. L. Stormer and K. W. Baldwin MRS Proceedings 145 (1989) https://doi.org/10.1557/PROC-145-3
Spectroscopy of Semiconductor Microstructures
Klaus Ploog NATO ASI Series, Spectroscopy of Semiconductor Microstructures 206 1 (1989) https://doi.org/10.1007/978-1-4757-6565-6_1
High Magnetic Fields in Semiconductor Physics II
F. I. B. Williams, D. C. Glattli, G. Deville, et al. Springer Series in Solid-State Sciences, High Magnetic Fields in Semiconductor Physics II 87 157 (1989) https://doi.org/10.1007/978-3-642-83810-1_26
Coupling Between Magnetoplasmon and Cyclotron Modes in a Very High-Mobility Two-Dimensional Electron Gas
S Huant, G Martinez and B Etienne Europhysics Letters (EPL) 9 (4) 397 (1989) https://doi.org/10.1209/0295-5075/9/4/017
The Growth and Physics of MBE Structures
D C Peacock, D A Ritchie, J E F Frost, et al. Physica Scripta T29 141 (1989) https://doi.org/10.1088/0031-8949/1989/T29/026
Electron mobilities exceeding 107cm2/V s in modulation‐doped GaAs
Loren Pfeiffer, K. W. West, H. L. Stormer and K. W. Baldwin Applied Physics Letters 55 (18) 1888 (1989) https://doi.org/10.1063/1.102162
Dopant distribution for maximum carrier mobility in selectively doped Al0.30Ga0.70As/GaAs heterostructures
E. F. Schubert, Loren Pfeiffer, K. W. West and A. Izabelle Applied Physics Letters 54 (14) 1350 (1989) https://doi.org/10.1063/1.100712
Tilted-field cyclotron resonance in a very high mobility two-dimensional electron gas
S. Huant, G. Martinez and B. Etienne Superlattices and Microstructures 6 (1) 103 (1989) https://doi.org/10.1016/0749-6036(89)90103-1
Electronic transport in low-dimensional structures
J J Harris, J A Pals and R Woltjer Reports on Progress in Physics 52 (10) 1217 (1989) https://doi.org/10.1088/0034-4885/52/10/002
Optimisation of (Al,Ga)As/GaAs two-dimensional electron gas structures for low carrier densities and ultrahigh mobilities at low temperatures
C T Foxon, J J Harris, D Hilton, J Hewett and C Roberts Semiconductor Science and Technology 4 (7) 582 (1989) https://doi.org/10.1088/0268-1242/4/7/016
Photoluminescence studies of planar-doped GaAs-Ga1−xAlxAs multiple-quantum-well structures
R. Stepniewski, S. Huant, G. Martinez and B. Etienne Physical Review B 40 (14) 9772 (1989) https://doi.org/10.1103/PhysRevB.40.9772
Two-dimensional electron system with extremely low disorder
M. Shayegan, V. J. Goldman, M. Santos, T. Sajoto, L. Engel and D. C. Tsui Applied Physics Letters 53 (21) 2080 (1988) https://doi.org/10.1063/1.100306
Observation of a Magnetically Induced Wigner Solid
E. Y. Andrei, G. Deville, D. C. Glattli, et al. Physical Review Letters 60 (26) 2765 (1988) https://doi.org/10.1103/PhysRevLett.60.2765
Reduction in the concentration of D
X centers in Si-doped GaAlAs using the planar doping technique
B. Etienne and V. Thierry-Mieg Applied Physics Letters 52 (15) 1237 (1988) https://doi.org/10.1063/1.99167