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Occupied and unoccupied electronic states in SiO/sub 2/ as measured by direct and inversion photoemission and soft X-ray emission
Etats électroniques occupés et inoccupés de SiO2 mesurés par photoémission directe et inverse et par émission d'X mous

M. Azizan, R. Baptist, A. Brenac, G. Chauvet, T.A. Nguyen Tan

J. Phys. France, 48 1 (1987) 81-91

DOI: https://doi.org/10.1051/jphys:0198700480108100

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