La fonctionnalité Article cité par… liste les citations d'un article. Ces citations proviennent de la base de données des articles de EDP Sciences, ainsi que des bases de données d'autres éditeurs participant au programme CrossRef Cited-by Linking Program . Vous pouvez définir une alerte courriel pour être prévenu de la parution d'un nouvel article citant " cet article (voir sur la page du résumé de l'article le menu à droite).
Article cité :
A. Ismail , J.M. Palau , L. Lassabatère
J. Phys. France, 45 10 (1984) 1717-1723
Citations de cet article :
11 articles
Properties of InP(110) surfaces, InP(110)−Ag interfaces and InP(110)−Ag schottky diodes contribution of the temperature
M. Dumas, M. Ben Kacem, J.M. Palau and L. Lassabatère Surface Science 189-190 315 (1987) https://doi.org/10.1016/S0039-6028(87)80448-X
A study of oxygen interaction with GaSb cleaved surfaces by work function and photovoltage measurements
J. Bonnet, L. Soonckindt, A. Ismail and L. Lassabatere Thin Solid Films 151 (1) 103 (1987) https://doi.org/10.1016/0040-6090(87)90012-5
Semiconductor Interfaces
L. Lassabatère Springer Proceedings in Physics, Semiconductor Interfaces 22 239 (1987) https://doi.org/10.1007/978-3-642-72967-6_20
The effect of surface preparation and properties on AgGaAs (100) Schottky diodes
A. Ismail, J.M. Palau and L. Lassabatère Surface Science 168 (1-3) 386 (1986) https://doi.org/10.1016/0039-6028(86)90868-X
Properties of 100 K InP(110) cleaved surface and relevant Schottky diodes
A. Ben Brahim, A. Ismail, M. Dumas and L. Lassabatére Surface Science 178 (1-3) 158 (1986) https://doi.org/10.1016/0039-6028(86)90291-8
GaAs (110)–oxygen interaction: A study of electronic properties
A. Ismail, J. M. Palau and L. Lassabatere Journal of Applied Physics 60 (5) 1730 (1986) https://doi.org/10.1063/1.337266
Formation and properties of (Au, Al, Ag, In) (InP-GaAs) Schottky diodes; contribution of the semiconductor surface to the diode characteristics
L. Lassabatère, A. Ismail, J.M. Palau and A. Ben Brahim Surface Science 168 (1-3) 336 (1986) https://doi.org/10.1016/0039-6028(86)90863-0
The adsorption of oxygen on InP cleaved surfaces and its influence on schottky barrier properties
A. Ismail, A. Ben Brahim, J.M. Palau and L. Lassabatère Surface Science 168 (1-3) 409 (1986) https://doi.org/10.1016/0039-6028(86)90871-X
Electronic properties of the InP(100) surface
J.M. Moison and M. Bensoussan Surface Science 168 (1-3) 68 (1986) https://doi.org/10.1016/0039-6028(86)90837-X
A study of the cleaved InP surface by CPD and SPV topographies
A. Ismail, A. Ben Brahim, J.M. Palau and L. Lassabatere Surface Science 164 (1) 43 (1985) https://doi.org/10.1016/0039-6028(85)90699-5
Comparison between GaAs(110) and InP(110) surface properties induced by cleavage defects and by oxygen adsorption
A. Ismail, A. Ben Brahim, J.M. Palau and L. Lassabatère Surface Science 162 (1-3) 195 (1985) https://doi.org/10.1016/0039-6028(85)90895-7