Silicon surfaces : metallic character, oxidation and adhesion
J. Phys. France, 44 6 (1983) 707-711
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https://doi.org/10.1007/BF00617808
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https://doi.org/10.1007/978-3-642-84482-9_23
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https://doi.org/10.1016/0169-4332(92)90336-V
Passivation and promotion of oxidation: reaction of oxygen with Fe/GaAs(100)
Li Nan, Meng Ge, Xie Kan and Lin Zhang-daSurface Science 259 (3) 301 (1991)
https://doi.org/10.1016/0039-6028(91)90560-F
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The initial growth rate of thermal silicon oxide
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https://doi.org/10.1002/pssa.2211160129
Models for the oxidation of silicon
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https://doi.org/10.1080/10408438808242183
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