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Article cité :
E. Louis , F. Flores
J. Phys. France, 42 9 (1981) 1313-1325
Citations de cet article :
8 articles
Energetics of metal/ceramic interfaces, metal-semiconductor Schottky contacts, and their relationship
Jian-Guo Li Materials Chemistry and Physics 47 (2-3) 126 (1997) https://doi.org/10.1016/S0254-0584(97)80041-7
Character of the N D -D h (0, d) phase transition in diskotic liquid crystals
E. M. Aver’yanov Journal of Experimental and Theoretical Physics Letters 63 (1) 33 (1996) https://doi.org/10.1134/1.566959
Schottky contacts to cleaved GaAs (110) surfaces. I. Electrical properties and microscopic theories
A B McLean and R H Williams Journal of Physics C: Solid State Physics 21 (4) 783 (1988) https://doi.org/10.1088/0022-3719/21/4/016
On the formation of semiconductor interfaces
F Flores and C Tejedor Journal of Physics C: Solid State Physics 20 (2) 145 (1987) https://doi.org/10.1088/0022-3719/20/2/001
The interaction of Mn with the clean and oxidised GaAs(110) surface
A B McLean and D A Evans Semiconductor Science and Technology 2 (1) 50 (1987) https://doi.org/10.1088/0268-1242/2/1/007
Anion-induced surface states for the ideal (100) faces of GaAs, AlAs and GaSb
G. Platero, J. Sánchez-Dehesa, C. Tejedor, F. Flores and A. Muñoz Surface Science 172 (1) 47 (1986) https://doi.org/10.1016/0039-6028(86)90582-0
Initial stages of the Schottky-barrier formation for an abrupt Al-GaAs(100) interface
J. C. Durán, G. Platero and F. Flores Physical Review B 34 (4) 2389 (1986) https://doi.org/10.1103/PhysRevB.34.2389
Schottky barrier formation. I. Abrupt metal-semiconductor junctions
F Guinea, J Sanchez-Dehesa and F Flores Journal of Physics C: Solid State Physics 16 (33) 6499 (1983) https://doi.org/10.1088/0022-3719/16/33/021