EDP Sciences logo
Authentification abonné
Rechercher
Menu

Article cité par

La fonctionnalité Article cité par… liste les citations d'un article. Ces citations proviennent de la base de données des articles de EDP Sciences, ainsi que des bases de données d'autres éditeurs participant au programme CrossRef Cited-by Linking Program. Vous pouvez définir une alerte courriel pour être prévenu de la parution d'un nouvel article citant " cet article (voir sur la page du résumé de l'article le menu à droite).

Article cité :

Three‐Stage Diffusion Process of Carriers in Thin InSe

Ruoxi Tan, Xiaodong Xu, Mengyao Liu, Jiafan Qu, Hongyan Shi, Weiqi Li, Jianqun Yang, Bo Gao and Xingji Li
Advanced Optical Materials 13 (14) (2025)
https://doi.org/10.1002/adom.202403449

Solution‐Based Processing of Optoelectronically Active Indium Selenide

Joohoon Kang, Spencer A. Wells, Vinod K. Sangwan, et al.
Advanced Materials 30 (38) (2018)
https://doi.org/10.1002/adma.201802990

Nanotexturing To Enhance Photoluminescent Response of Atomically Thin Indium Selenide with Highly Tunable Band Gap

Mauro Brotons-Gisbert, Daniel Andres-Penares, Joonki Suh, et al.
Nano Letters 16 (5) 3221 (2016)
https://doi.org/10.1021/acs.nanolett.6b00689

Electronic structure of indium selenide probed by magnetoabsorption spectroscopy under high pressure

Marius Millot, Jean-Marc Broto, Sylvie George, Jesús González and Alfredo Segura
Physical Review B 81 (20) (2010)
https://doi.org/10.1103/PhysRevB.81.205211

Band structure of indium selenide investigated by intrinsic photoluminescence under high pressure

F. J. Manjón, A. Segura, V. Muñoz-Sanjosé, et al.
Physical Review B 70 (12) (2004)
https://doi.org/10.1103/PhysRevB.70.125201

Specific features of the electronic structure of III–VI layered semiconductors: recent results on structural and optical measurements under pressure and electronic structure calculations

A. Segura, F. J. Manjón, D. Errandonea, J. Pellicer‐Porres, V. Muñoz, G. Tobias, P. Ordejón, E. Canadell, A. San Miguel and D. Sánchez‐Portal
physica status solidi (b) 235 (2) 267 (2003)
https://doi.org/10.1002/pssb.200301567

Evolution of Raman spectra as a function of layer thickness in ultra-thin InSe films

R Schwarcz, M A Kanehisa, M Jouanne, J F Morhange and M Eddrief
Journal of Physics: Condensed Matter 14 (5) 967 (2002)
https://doi.org/10.1088/0953-8984/14/5/302

Experimental and theoretical study of band structure of InSe andIn1−xGaxSe(x<0.2)under high pressure: Direct to indirect crossovers

F. J. Manjón, D. Errandonea, A. Segura, et al.
Physical Review B 63 (12) (2001)
https://doi.org/10.1103/PhysRevB.63.125330

Excitonic absorption and Urbach-Martienssen tails in Gd-doped and undoped p-type GaSe

B Abay, H S Güder, H Efeoglu and Y K Yogurtçu
Semiconductor Science and Technology 15 (6) 535 (2000)
https://doi.org/10.1088/0268-1242/15/6/308

Effects of pressure and temperature on the dielectric constant of GaS, GaSe, and InSe:  Role of the electronic contribution

D. Errandonea, A. Segura, V. Muñoz and A. Chevy
Physical Review B 60 (23) 15866 (1999)
https://doi.org/10.1103/PhysRevB.60.15866

Electric-Field-Controlled Attenuator for Near IR Laser Radiation

A. Agayeva, V. Salmanov, E. Gousseynov and S. Samedov
International Journal of Infrared and Millimeter Waves 20 (1) 71 (1999)
https://doi.org/10.1023/A:1021751617629

Effect of annealing and surface treatment on the efficiency of photoelectrochemical (PEC) solar cells with vacuum-deposited n-InSe thin film electrode

V. Damodara Das, J. Sathyanarayanan and Laxmikant Damodare
Surface and Coatings Technology 94-95 669 (1997)
https://doi.org/10.1016/S0257-8972(97)00514-8

Strong optical nonlinearities in gallium and indium selenides related to inter-valence-band transitions induced by light pulses

A. Segura, J. Bouvier, M. V. Andrés, F. J. Manjón and V. Muñoz
Physical Review B 56 (7) 4075 (1997)
https://doi.org/10.1103/PhysRevB.56.4075

Investigation of conduction-band structure, electron-scattering mechanisms, and phase transitions in indium selenide by means of transport measurements under pressure

D. Errandonea, A. Segura, J. F. Sánchez-Royo, et al.
Physical Review B 55 (24) 16217 (1997)
https://doi.org/10.1103/PhysRevB.55.16217

Frontiers in Nanoscale Science of Micron/Submicron Devices

O. Lang, R. Rudolph, C. Pettenkofer and W. Jaegermann
Frontiers in Nanoscale Science of Micron/Submicron Devices 295 (1996)
https://doi.org/10.1007/978-94-009-1778-1_21

Anisotropy of the refractive index and absorption coefficient in the layer plane of gallium telluride single crystals

J. F. Sánchez-Royo, A. Segura and V. Muñoz
Physica Status Solidi (a) 151 (1) 257 (1995)
https://doi.org/10.1002/pssa.2211510128

Optical second-harmonic generation in lossy media: Application to GaSe and InSe

E. Bringuier, A. Bourdon, N. Piccioli and A. Chevy
Physical Review B 49 (24) 16971 (1994)
https://doi.org/10.1103/PhysRevB.49.16971

In-situ and real time monitoring of the InSe surface by atomic force microscopy with atomic resolution during electrochemical reactions

Kohei Uosaki and Michio Koinuma
Journal of Electroanalytical Chemistry 357 (1-2) 301 (1993)
https://doi.org/10.1016/0022-0728(93)80387-W

Photoelectrochemistry and Photovoltaics of Layered Semiconductors

E. Bucher
Physics and Chemistry of Materials with Low-Dimensional Structures, Photoelectrochemistry and Photovoltaics of Layered Semiconductors 14 1 (1992)
https://doi.org/10.1007/978-94-015-1301-2_1

Shallow-donor impurities in indium selenide investigated by means of far-infrared spectroscopy

J. Martinez-Pastor, A. Segura, C. Julien and A. Chevy
Physical Review B 46 (8) 4607 (1992)
https://doi.org/10.1103/PhysRevB.46.4607

Three-dimensional electrons and two-dimensional electric subbands in the transport properties of tin-dopedn-type indium selenide: Polar and homopolar phonon scattering

A. Segura, B. Mar, J. Martinez-Pastor and A. Chevy
Physical Review B 43 (6) 4953 (1991)
https://doi.org/10.1103/PhysRevB.43.4953

Angular properties of second-harmonic polarization due to high-order nonlinearities: Application to GaSe and InSe

A. Bourdon, E. Bringuier, M. T. Portella, M. Vivières and N. Piccioli
Physical Review Letters 65 (15) 1925 (1990)
https://doi.org/10.1103/PhysRevLett.65.1925

A New Process for Optical Data Recording by Photoelectrochemical Etching

M. A. Ryan, C. Levy‐Clement, D. Mahalu and R. Tenne
Berichte der Bunsengesellschaft für physikalische Chemie 94 (6) 671 (1990)
https://doi.org/10.1002/bbpc.19900940610

Growth conditions and optical properties of InxSe1−x thin films

J. P. Guesdon, G. Julien, M. Balkanski and A. Chevy
Physica Status Solidi (a) 101 (2) 495 (1987)
https://doi.org/10.1002/pssa.2211010222

Electrochemical Behavior of p-Type Indium Selenide Single Crystal Electrodes in Dark and under Illumination

Kohei Uosaki, Susumu Kaneko, Hideaki Kita and A Chevy
Bulletin of the Chemical Society of Japan 59 (2) 599 (1986)
https://doi.org/10.1246/bcsj.59.599

Improved performance of InSe-based photoelectrochemical cells by means of a selective (photo)electrochemical etching

R. Tenne, B. Theys, J. Rioux and C. Levy-Clement
Journal of Applied Physics 57 (1) 141 (1985)
https://doi.org/10.1063/1.335377

The electric sub-band structure of electron accumulation layers in InSe from Shubnikov-de Haas oscillations and inter-sub-band resonance

E Kress-Rogers, G F Hopper, R J Nicholas, et al.
Journal of Physics C: Solid State Physics 16 (21) 4285 (1983)
https://doi.org/10.1088/0022-3719/16/21/027

Photoconductivity and photovoltaic effect in indium selenide

A. Segura, J. P. Guesdon, J. M. Besson and A. Chevy
Journal of Applied Physics 54 (2) 876 (1983)
https://doi.org/10.1063/1.332050