La fonctionnalité Article cité par… liste les citations d'un article. Ces citations proviennent de la base de données des articles de EDP Sciences, ainsi que des bases de données d'autres éditeurs participant au programme CrossRef Cited-by Linking Program . Vous pouvez définir une alerte courriel pour être prévenu de la parution d'un nouvel article citant " cet article (voir sur la page du résumé de l'article le menu à droite).
Article cité :
M. Lannoo
J. Phys. France, 40 5 (1979) 461-466
Citations de cet article :
37 articles
Microscopic origin of the electric Dzyaloshinskii-Moriya interaction
Peng Chen, Hong Jian Zhao, Sergey Prosandeev, Sergey Artyukhin and Laurent Bellaiche Physical Review B 106 (22) (2022) https://doi.org/10.1103/PhysRevB.106.224101
Tight Binding for Complex Semiconductor Systems
C. Delerue, M. Lannoo and G. Allan physica status solidi (b) 227 (1) 115 (2001) https://doi.org/10.1002/1521-3951(200109)227:1<115::AID-PSSB115>3.0.CO;2-2
Concepts in Surface Physics
M.-C. Desjonquères and D. Spanjaard Concepts in Surface Physics 162 (1996) https://doi.org/10.1007/978-3-642-61400-2_5
Structural stability of atomic environment types in AB intermetallic compounds
Ying Chen, Shuichi Iwata, Jingnan Liu, Pierre Villars and John Rodgers Modelling and Simulation in Materials Science and Engineering 4 (4) 335 (1996) https://doi.org/10.1088/0965-0393/4/4/001
Atomistic model for the evaluation of the stability of diamond under uniaxial tensile force
Yoichiro Uemura Physical Review B 49 (10) 6528 (1994) https://doi.org/10.1103/PhysRevB.49.6528
Simulation of elastic-network relaxation: Islands in semiconductor heterojunctions
M. Biagini and A. Catellani Journal of Applied Physics 76 (6) 3516 (1994) https://doi.org/10.1063/1.358452
Concepts in Surface Physics
M.-C. Desjonquères and D. Spanjaard Springer Series in Surface Sciences, Concepts in Surface Physics 30 145 (1993) https://doi.org/10.1007/978-3-642-97484-7_5
Structural stability, local topology and electron count in small s-valent clusters
Mehul Shah and D.G. Pettifor Journal of Alloys and Compounds 197 (2) 145 (1993) https://doi.org/10.1016/0925-8388(93)90037-N
Atomic and Electronic Structure of Surfaces
Michel Lannoo and Paul Friedel Springer Series in Surface Sciences, Atomic and Electronic Structure of Surfaces 16 25 (1991) https://doi.org/10.1007/978-3-662-02714-1_2
Computer Simulation in Materials Science
F. Ducastelle Computer Simulation in Materials Science 233 (1991) https://doi.org/10.1007/978-94-011-3546-7_11
Surface core-level shifts and relaxation of group-IVA-element chalcogenide semiconductors
G. Allan Physical Review B 43 (12) 9594 (1991) https://doi.org/10.1103/PhysRevB.43.9594
Negative-Ucharacter of the adsorption on semiconductor surfaces: Application to metals on GaAs(110)
G. Allan and M. Lannoo Physical Review Letters 66 (9) 1209 (1991) https://doi.org/10.1103/PhysRevLett.66.1209
Atomic and Electronic Structure of Surfaces
Michel Lannoo and Paul Friedel Springer Series in Surface Sciences, Atomic and Electronic Structure of Surfaces 16 200 (1991) https://doi.org/10.1007/978-3-662-02714-1_8
Atomic and Electronic Structure of Surfaces
Michel Lannoo and Paul Friedel Springer Series in Surface Sciences, Atomic and Electronic Structure of Surfaces 16 157 (1991) https://doi.org/10.1007/978-3-662-02714-1_7
Theoretical calculation of the electron-capture cross section due to a dangling bond at the Si(111)-SiO2interface
Didier Goguenheim and Michel Lannoo Physical Review B 44 (4) 1724 (1991) https://doi.org/10.1103/PhysRevB.44.1724
Tight‐Binding Approach to the Dangling Bond Feature of Covalent Crystals
Y. Uemura physica status solidi (b) 167 (1) 51 (1991) https://doi.org/10.1002/pssb.2221670106
Lattice dynamics of Si calculated with a semiempirical approach
A. Mazur and J. Pollmann Physical Review B 39 (8) 5261 (1989) https://doi.org/10.1103/PhysRevB.39.5261
The Structures of Binary Compounds
J.A. MAJEWSKI and P. VOGL Cohesion and Structure, The Structures of Binary Compounds 2 287 (1989) https://doi.org/10.1016/B978-0-444-87478-8.50008-6
Polycrystalline Semiconductors
H. Teichler Springer Proceedings in Physics, Polycrystalline Semiconductors 35 25 (1989) https://doi.org/10.1007/978-3-642-93413-1_4
The Physics and Chemistry of SiO2 and the Si-SiO2 Interface
Michel Lannoo The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 259 (1988) https://doi.org/10.1007/978-1-4899-0774-5_29
Deviation from the classical 4:2 coordination in very thinSiO2films grown on silicon
G. Hollinger, S. J. Sferco and M. Lannoo Physical Review B 37 (12) 7149 (1988) https://doi.org/10.1103/PhysRevB.37.7149
Mechanisms of surface dissociation the Si(111)-(2 × 1) surface
E.D. Gehain and M. Wautelet Surface Science 206 (1-2) 225 (1988) https://doi.org/10.1016/0039-6028(88)90023-4
Structures and Energies of Symmetrical 〈001〉 Tilt Grain Boundaries in Silicon
M. Kohyama physica status solidi (b) 141 (1) 71 (1987) https://doi.org/10.1002/pssb.2221410106
Structures and Energies of Symmetrical 〈011〉 Tilt Grain Boundaries in Silicon
M. Kohyama, R. Yamamoto and M. Doyama physica status solidi (b) 137 (1) 11 (1986) https://doi.org/10.1002/pssb.2221370102
Energies and Structures of (111) Coincidence Twist Boundaries in 3C‐SiC, Diamond, and Silicon
M. Kohyama, R. Yamamoto and M. Doyama physica status solidi (b) 136 (1) 31 (1986) https://doi.org/10.1002/pssb.2221360103
Reconstructed Structures of Symmetrical 〈011〉 Tilt Grain Boundaries in Silicon
M. Kohyama, R. Yamamoto and M. Doyama physica status solidi (b) 138 (2) 387 (1986) https://doi.org/10.1002/pssb.2221380202
Effects of External Shear Stress on the Smallest Double Kink Nucleation Process in Si
Kinichi Masuda, Hirofumi Ushio and Kenichi Kojima Journal of the Physical Society of Japan 54 (2) 598 (1985) https://doi.org/10.1143/JPSJ.54.598
Self‐Consistent Tight‐Binding Method for Total Energy Calculations of Tetrahedral Semiconductors Including Surfaces and Defects
F. Bechstedt, D. Reichardt and R. Enderlein physica status solidi (b) 131 (2) 643 (1985) https://doi.org/10.1002/pssb.2221310226
Nature of covalent bonding of self-interstitials in silicon
M. Lannoo and M. Schlüter Physical Review B 31 (8) 5468 (1985) https://doi.org/10.1103/PhysRevB.31.5468
Empirical chemical pseudopotential theory of molecular and metallic bonding
G. C. Abell Physical Review B 31 (10) 6184 (1985) https://doi.org/10.1103/PhysRevB.31.6184
Electron Irradiation-Induced Lattice Defects in Covalent Semiconductors: {113} Stacking Fault
Kin-ichi Masuda and Kenichi Kojima Journal of the Physical Society of Japan 52 (1) 10 (1983) https://doi.org/10.1143/JPSJ.52.10
Trends in the cohesive properties of sp bonded elements
G. Allan and M. Lannoo Journal de Physique 44 (12) 1355 (1983) https://doi.org/10.1051/jphys:0198300440120135500
Electronic structure of carbon intercalated atoms in graphite. A single-layer approach
C. Priester, G. Allan and J. Conard Physical Review B 26 (8) 4680 (1982) https://doi.org/10.1103/PhysRevB.26.4680
Calculation of Core Structure and Core Energy of Screw and 60° Dislocations in Si: Tight-Binding Method
Kin-ichi Masuda and Kenichi Kojima Journal of the Physical Society of Japan 51 (5) 1510 (1982) https://doi.org/10.1143/JPSJ.51.1510
Vibrations at Surfaces
G. Allan and J. Lopez Vibrations at Surfaces 39 (1982) https://doi.org/10.1007/978-1-4684-4058-4_3
Point Defects in Semiconductors I
Michel Lannoo and Jacques Bourgoin Springer Series in Solid-State Sciences, Point Defects in Semiconductors I 22 155 (1981) https://doi.org/10.1007/978-3-642-81574-4_5
Calculation of atomic relaxation near the (111) 1 × 1 surface of covalent semiconductors: Tight‐binding Green's function approach
K. Masuda physica status solidi (b) 107 (2) 529 (1981) https://doi.org/10.1002/pssb.2221070217