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Article cité :
A. Lepetit
J. Phys. France, 26 4 (1965) 175-179
Citations de cet article :
25 articles
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Ze Wang, Ji-hao Wang, Wei-feng Ge, et al. Chinese Journal of Chemical Physics 31 (6) 767 (2018) https://doi.org/10.1063/1674-0068/31/cjcp1803040
Origin of Noise in Layered MoTe2 Transistors and its Possible Use for Environmental Sensors
Yen‐Fu Lin, Yong Xu, Che‐Yi Lin, et al. Advanced Materials 27 (42) 6612 (2015) https://doi.org/10.1002/adma.201502677
Indirect-to-Direct Band Gap Crossover in Few-Layer MoTe2
Ignacio Gutiérrez Lezama, Ashish Arora, Alberto Ubaldini, et al. Nano Letters 15 (4) 2336 (2015) https://doi.org/10.1021/nl5045007
Surface transport and band gap structure of exfoliated 2H-MoTe
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Ignacio Gutiérrez Lezama, Alberto Ubaldini, Maria Longobardi, et al. 2D Materials 1 (2) 021002 (2014) https://doi.org/10.1088/2053-1583/1/2/021002
Developments in Measuring and Calculating Chemical Vapor Transport Phenomena Demonstrated on Cr, Mo, W, and Their Compounds
M. Lenz and R. Gruehn Chemical Reviews 97 (8) 2967 (1997) https://doi.org/10.1021/cr940313a
Influence of the stoichiometry deviation on the electrical properties of MoTe2-x
A. Bonnet, A. Conan, M. Spiesser and M. Zoaeter Journal de Physique 49 (5) 803 (1988) https://doi.org/10.1051/jphys:01988004905080300
Transport properties of MoSe x Te2−x (0 ≤x ≤ 2) single crystals
M K Agarwal, P D Patel and R M Joshi Bulletin of Materials Science 9 (5) 337 (1987) https://doi.org/10.1007/BF02744015
Characterisation of MoSexTe2−x (0 ⩽ x ⩽ 2) electrodes in terms of energetic location of valence and conduction bands
M. K. Agarwal, P. D. Patel and R. M. Joshi Crystal Research and Technology 22 (2) 279 (1987) https://doi.org/10.1002/crat.2170220223
Hall Mobility in n-Type Molybdenum Ditelluride
Tsuneo Watanabe and Akinari Kasai Journal of the Physical Society of Japan 54 (7) 2666 (1985) https://doi.org/10.1143/JPSJ.54.2666
Semiconducting properties and band structure of MoTe2 single crystals
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Dependence of the Total Mobility in a One‐Band Model Applicationto n‐Type MoTe2
A. Conan, A. Bonnet, M. Zoaeter and D. Ramoul physica status solidi (b) 124 (1) 403 (1984) https://doi.org/10.1002/pssb.2221240144
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A. Conan, D. Delaunay, A. Bonnet, A. G. Moustafa and M. Spiesser physica status solidi (b) 94 (1) 279 (1979) https://doi.org/10.1002/pssb.2220940132
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On the nature of the top of the valence band in layered Mo and W dichalcogenides
R. M. M. Fonville, W. Geertsma and C. Haas physica status solidi (b) 85 (2) 621 (1978) https://doi.org/10.1002/pssb.2220850226
Pressure dependence of the electrical conductivity in 2H‐MoS2 and 2H‐WSe2
S. H. El‐Mahalawy and B. L. Evans physica status solidi (b) 86 (1) 151 (1978) https://doi.org/10.1002/pssb.2220860117
Temperature dependence of the electrical conductivity and hall coefficient in 2H‐MoS2, MoSe2, WSe2, and MoTe2
S. H. El‐Mahalawy and B. L. Evans physica status solidi (b) 79 (2) 713 (1977) https://doi.org/10.1002/pssb.2220790238
Détermination de la structure de bande de MoTe2-x à partir de l'étude de phénomènes de transport
A. Conan, M. Zoaeter and G. Goureaux Journal de Physique 37 (10) 1233 (1976) https://doi.org/10.1051/jphys:0197600370100123300
Transport properties of MoTe2−x and MoSe2−x compounds between 130 and 300°K
Alain Conan, Guy Goureaux and Mohamed Zoaeter Journal of Physics and Chemistry of Solids 36 (4) 315 (1975) https://doi.org/10.1016/0022-3697(75)90029-3
The electrical properties and the magnitude of the indirect gap in the semiconducting transition metal dichalcogenide layer crystals
A J Grant, T M Griffiths, G D Pitt and A D Yoffe Journal of Physics C: Solid State Physics 8 (1) L17 (1975) https://doi.org/10.1088/0022-3719/8/1/004
Optical constants of MoTe2from reflectivity measurements. (Brillouin zone transitions)
V Grasso, G Mondio and G Saitta Journal of Physics C: Solid State Physics 5 (10) 1101 (1972) https://doi.org/10.1088/0022-3719/5/10/015
Crystal Chemistry and Semiconduction in Transition Metal Binary Compounds
J.P. SUCHET Crystal Chemistry and Semiconduction in Transition Metal Binary Compounds 196 (1971) https://doi.org/10.1016/B978-0-12-675650-0.50012-5
Semiconductor to metal transition in MoTe2
M.B. Vellinga, R. de Jonge and C. Haas Journal of Solid State Chemistry 2 (2) 299 (1970) https://doi.org/10.1016/0022-4596(70)90085-X
The photovoltage in single crystals of $\alpha$-MoTe2
G P Kekelidze and B L Evans Journal of Physics D: Applied Physics 2 (6) 855 (1969) https://doi.org/10.1088/0022-3727/2/6/310
The transition metal dichalcogenides discussion and interpretation of the observed optical, electrical and structural properties
J.A. Wilson and A.D. Yoffe Advances in Physics 18 (73) 193 (1969) https://doi.org/10.1080/00018736900101307