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Cited article:

Picosecond Modulation of the Fundamental Absorption of Light: Mapping of Oscillations and Depletion of Electron Population in the Field of Intrinsic Intense Stimulated Emission in an AlxGa1 – xAs–GaAs–AlxGa1 – xAs Heterostructure (Experimental Study)

N. N. Ageeva, I. L. Bronevoi and A. N. Krivonosov
Journal of Experimental and Theoretical Physics 135 (6) 965 (2022)
https://doi.org/10.1134/S1063776122120019

Functional Dependences of the Maximum Energy Density of the Spectral Component of Stimulated Picosecond Emission by GaAs upon Gain Saturation. The Residual Characteristic Emission Relaxation Time

N. N. Ageeva, I. L. Bronevoi, D. N. Zabegaev and A. N. Krivonosov
Semiconductors 56 (3) 145 (2022)
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Self-synchronization of the modulation of energy-levels population with electrons in GaAs induced by picosecond pulses of probe radiation and intrinsic stimulated emission

N. N. Ageeva, I. L. Bronevoi, D. N. Zabegaev and A. N. Krivonosov
Semiconductors 50 (10) 1312 (2016)
https://doi.org/10.1134/S106378261610002X

Ultrafast self-modulation of the optical absorption spectrum under conditions of both the ultrashort optical pumping and superluminescence in GaAs

N. N. Ageeva, I. L. Bronevoĭ, A. N. Krivonosov and S. V. Stegantsov
Semiconductors 40 (7) 785 (2006)
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A local specific feature of variation in the spectrum of picosecond superluminescence upon adding excited carriers to a non-Fermi electron-hole plasma in GaAs

N. N. Ageeva, I. L. Bronevoi, A. N. Krivonosov, S. E. Kumekov and S. V. Stegantsov
Semiconductors 37 (5) 526 (2003)
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“LO-Phonon” correlation between picosecond superluminescence spectrum and special features of absorption spectrum in GaAs for non-Fermi distribution of carriers induced by picosecond light pulse

N. N. Ageeva, I. L. Bronevoi, A. N. Krivonosov, S. E. Kumekov and S. V. Stegantsov
Semiconductors 36 (2) 136 (2002)
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Variable temperature, variable-gap Otto prism coupler for use in a vacuum environment

G. F. Cairns, S. M. O’Prey and P. Dawson
Review of Scientific Instruments 71 (11) 4213 (2000)
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Influence of the energy transport of electrons by optical phonon emission on the superluminescence and reversible bleaching of a thin GaAs layer excited by a strong picosecond light pulse

I. L. Bronevoi and A. N. Krivonosov
Semiconductors 33 (1) 10 (1999)
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Effect of the diameter of the photoexcited region on the picosecond relaxation of bleaching in a thin layer of GaAs

I. L. Bronevoi and A. N. Krivonosov
Semiconductors 32 (5) 484 (1998)
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Stimulated-emission spectrum arising from interband absorption of a picosecond optical pulse in a thin layer of GaAs

I. L. Bronevoi and A. N. Krivonosov
Semiconductors 32 (5) 479 (1998)
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Femtosecond relaxation of carriers generated by near-band-gap optical excitation in compound semiconductors

J. E. Bair, D. Cohen, J. P. Krusius and C. R. Pollock
Physical Review B 50 (7) 4355 (1994)
https://doi.org/10.1103/PhysRevB.50.4355

Generalized Transfer‐Matrix Description of the Optical Properties of Spatially Dispersive Periodic Metal Multilayers

U. Trutschel, M. Golz and M. Abraham
physica status solidi (b) 151 (1) 383 (1989)
https://doi.org/10.1002/pssb.2221510143

Study of the platinum/electrolyte interface using surface plasmon excitation at stratified electrodes

A. Tadjeddine and A. Hadjadj
Journal of Electroanalytical Chemistry and Interfacial Electrochemistry 246 (1) 43 (1988)
https://doi.org/10.1016/0022-0728(88)85049-6

Study of the platinum/electrolyte interface using surface plasmon excitation at stratified electrodes Part I. Preparation and characterization of the electrodes

A. Hadjadj, A. Tadjeddine and G. Hincelin
Journal of Electroanalytical Chemistry and Interfacial Electrochemistry 228 (1-2) 251 (1987)
https://doi.org/10.1016/0022-0728(87)80110-9