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Cited article:

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Alternative Way for Detecting Franck‐Condon Shifts from Thermally Broadened Photoneutralization Cross‐Section Bands of Deep Traps in Semiconductors

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Optical absorption coefficient of semiconductors in the extrinsic region obtained by photoconductivity measurements: application to SI GaAs

J Pastrnak, F Karel and O Petricek
Semiconductor Science and Technology 5 (8) 867 (1990)
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Nature of long-wavelength luminescence of ZnSe(Te):Zn

O. V. Vakulenko, V. D. Ryzhikov and B. M. Shutov
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MAGNETO-CIRCULAR DICHROISM SPECTRA IN SEMI-INSULATING GaAs: Cr AND InP : Fe

K. SATO, T. IIJIMA, T. NAKAJIMA and S. KOBAYASHI
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The study of impurity levels in LEC semi-insulating GaAs:Cr samples by two-source photoconductivity measurements

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Absolute photoionization cross sections of the acceptor state level of chromium in indium phosphide

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Interpretation of deep-level optical spectroscopy and deep-level transient spectroscopy data: Application to irradiation defects in GaAs

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Observation of the internal luminescence of Cr2+(3d4) in GaAs under hydrostatic pressure

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