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Photoionization cross section ratio of nitrogen-site carbon in GaN under sub-bandgap-light irradiation determined by isothermal capacitance transient spectroscopy
Depth profiles of electron traps generated during reactive ion etching in n-type 4H-SiC characterized by using isothermal capacitance transient spectroscopy
Kazutaka Kanegae, Takafumi Okuda, Masahiro Horita, Jun Suda and Tsunenobu Kimoto Journal of Applied Physics 130(10) (2021) https://doi.org/10.1063/5.0059588
Influence of a 3D electric field enhancement model on the Monte Carlo calculation of the dark current in pixel arrays
Investigation of Current-Driven Degradation of 1.3 μm Quantum-Dot Lasers Epitaxially Grown on Silicon
Matteo Buffolo, Fabio Samparisi, Lorenzo Rovere, et al. IEEE Journal of Selected Topics in Quantum Electronics 26(2) 1 (2020) https://doi.org/10.1109/JSTQE.2019.2939519
Carlo De Santi, Arianna Nardo, Man Hoi Wong, Ken Goto, Akito Kuramata, Shigenobu Yamakoshi, Hisashi Murakami, Yoshinao Kumagai, Masataka Higashiwaki, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, Ferechteh H. Teherani, David C. Look and David J. Rogers 17 (2020) https://doi.org/10.1117/12.2544818
Rectification ratio and direction controlled by temperature in copper phthalocyanine ensemble molecular diodes
Carolina Sergi Lopes, Leandro Merces, Rafael Furlan de Oliveira, Davi Henrique Starnini de Camargo and Carlos César Bof Bufon Nanoscale 12(18) 10001 (2020) https://doi.org/10.1039/C9NR10601D
Thermal droop in III-nitride based light-emitting diodes: Physical origin and perspectives
Matteo Meneghini, Carlo De Santi, Alberto Tibaldi, Marco Vallone, Francesco Bertazzi, Gaudenzio Meneghesso, Enrico Zanoni and Michele Goano Journal of Applied Physics 127(21) (2020) https://doi.org/10.1063/5.0005874
Stability and degradation of isolation and surface in Ga2O3 devices
Managing Green Emission in Coupled InGaN QW–QDs Nanostructures via Nanoengineering
Z. C. Su, Z. L. Wang, J. D. Yu, et al. The Journal of Physical Chemistry C 121(40) 22523 (2017) https://doi.org/10.1021/acs.jpcc.7b07826
Heonsu Jeon, Li-Wei Tu, Michael R. Krames, Martin Strassburg, C. De Santi, M. Meneghini, M. La Grassa, N. Trivellin, B. Galler, R. Zeisel, B. Hahn, M. Goano, S. Dominici, M. Mandurrino, F. Bertazzi, G. Meneghesso and E. Zanoni 9768 97680D (2016) https://doi.org/10.1117/12.2210953
Kinetic Monte Carlo Simulations of Defects in Anatase Titanium Dioxide
Benedikt Weiler, Alessio Gagliardi and Paolo Lugli The Journal of Physical Chemistry C 120(18) 10062 (2016) https://doi.org/10.1021/acs.jpcc.6b01687
Bernd Witzigmann, Marek Osiński, Yasuhiko Arakawa, Michele Goano, Francesco Bertazzi, Xiangyu Zhou, Marco Mandurrino, Stefano Dominici, Marco Vallone, Giovanni Ghione, Alberto Tibaldi, Marco Calciati, Pierluigi Debernardi, Fabrizio Dolcini, Fausto Rossi, Giovanni Verzellesi, Matteo Meneghini, Nicola Trivellin, Carlo De Santi, Enrico Zanoni and Enrico Bellotti 9742 974202 (2016) https://doi.org/10.1117/12.2216489
Role of defects in the thermal droop of InGaN-based light emitting diodes
Persistent photocurrent (PPC) in solution-processed organic thin film transistors: Mechanisms of gate voltage control
Subhash Singh and Y. N. Mohapatra Journal of Applied Physics 120(4) (2016) https://doi.org/10.1063/1.4959823
Francesco Bertazzi, Stefano Dominici, Marco Mandurrino, Dipika Robidas, Xiangyu Zhou, Marco Vallone, Marco Calciati, Pierluigi Debernardi, Giovanni Verzellesi, Matteo Meneghini, Enrico Bellotti, Giovanni Ghione and Michele Goano 157 (2015) https://doi.org/10.1109/RTSI.2015.7325090
Physics‐based modeling and experimental implications of trap‐assisted tunneling in InGaN/GaN light‐emitting diodes
Calculation of the field dependence of the rates of emission of carriers from deep centers based on an experimental form-function for the optical transition
S. V. Bulyarskii, N. S. Grushko and A. V. Zhukov Journal of Experimental and Theoretical Physics 89(3) 547 (1999) https://doi.org/10.1134/1.559013
Transition mechanisms of two interacting DX centers in N-type AlGaAs using reverse-bias deep level transient spectroscopy and temperature-dependent pulse-width reverse-bias deep level transient spectroscopy methods