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Cited article:
M. Lannoo
J. Phys. France, 33 11-12 (1972) 1105-1113
This article has been cited by the following article(s):
9 articles
Calculation of Core Structure and Core Energy of Screw and 60° Dislocations in Si: Tight-Binding Method
Kin-ichi Masuda and Kenichi Kojima Journal of the Physical Society of Japan 51 (5) 1510 (1982) https://doi.org/10.1143/JPSJ.51.1510
Calculation of atomic relaxation near the (111) 1 × 1 surface of covalent semiconductors: Tight‐binding Green's function approach
K. Masuda physica status solidi (b) 107 (2) 529 (1981) https://doi.org/10.1002/pssb.2221070217
Linear-combination-of-atomic-orbitals, self-consistent-field method for the determination of the electronic structure of deep levels in semiconductors
M. Astier, N. Pottier and J. C. Bourgoin Physical Review B 19 (10) 5265 (1979) https://doi.org/10.1103/PhysRevB.19.5265
Chemical pseudopotential approach to covalent bonding. II. Bond lengths and bond energies in diamond, silicon and graphite
D W Bullett Journal of Physics C: Solid State Physics 8 (17) 2707 (1975) https://doi.org/10.1088/0022-3719/8/17/010
Self-consistent procedure for point defects in tight-binding systems: Application to semiconductors
M. Lannoo Physical Review B 10 (6) 2544 (1974) https://doi.org/10.1103/PhysRevB.10.2544
On the band structure of transition metals
J Friedel Journal of Physics F: Metal Physics 3 (4) 785 (1973) https://doi.org/10.1088/0305-4608/3/4/021
Simple Tight-Binding Calculation of the Transverse Effective Charges in III-V, II-VI, and IV-IV Compound Semiconductors
M. Lannoo and J. N. Decarpigny Physical Review B 8 (12) 5704 (1973) https://doi.org/10.1103/PhysRevB.8.5704
Dynamics of Fluids near the Critical Point: Decay Rate of Order-Parameter Fluctuations
Harry L. Swinney and Donald L. Henry Physical Review A 8 (5) 2586 (1973) https://doi.org/10.1103/PhysRevA.8.2586
Renormalization of Critical Exponents in a Compressible Ising Model
Karol A. Penson Physical Review B 8 (5) 2119 (1973) https://doi.org/10.1103/PhysRevB.8.2119