Articles citing this article

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Cited article:

Calculation of Core Structure and Core Energy of Screw and 60° Dislocations in Si: Tight-Binding Method

Kin-ichi Masuda and Kenichi Kojima
Journal of the Physical Society of Japan 51 (5) 1510 (1982)
https://doi.org/10.1143/JPSJ.51.1510

Calculation of atomic relaxation near the (111) 1 × 1 surface of covalent semiconductors: Tight‐binding Green's function approach

K. Masuda
physica status solidi (b) 107 (2) 529 (1981)
https://doi.org/10.1002/pssb.2221070217

Linear-combination-of-atomic-orbitals, self-consistent-field method for the determination of the electronic structure of deep levels in semiconductors

M. Astier, N. Pottier and J. C. Bourgoin
Physical Review B 19 (10) 5265 (1979)
https://doi.org/10.1103/PhysRevB.19.5265

Chemical pseudopotential approach to covalent bonding. II. Bond lengths and bond energies in diamond, silicon and graphite

D W Bullett
Journal of Physics C: Solid State Physics 8 (17) 2707 (1975)
https://doi.org/10.1088/0022-3719/8/17/010

Simple Tight-Binding Calculation of the Transverse Effective Charges in III-V, II-VI, and IV-IV Compound Semiconductors

M. Lannoo and J. N. Decarpigny
Physical Review B 8 (12) 5704 (1973)
https://doi.org/10.1103/PhysRevB.8.5704

Dynamics of Fluids near the Critical Point: Decay Rate of Order-Parameter Fluctuations

Harry L. Swinney and Donald L. Henry
Physical Review A 8 (5) 2586 (1973)
https://doi.org/10.1103/PhysRevA.8.2586