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Cited article:

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Simulation for deposition of cadmium telluride thin films in hot wall epitaxial system using Monte Carlo technique

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Structural and optical properties ofCdSxSe1−xnanowires

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Solid state recrystallization: a promising technique for the growth of semiconductor materials

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Growth by solid phase recrystallization and assessment of large ZnSe crystals of high purity and structural perfection

R. Triboulet, J.O. Ndap, A. Tromson-Carli, et al.
Journal of Crystal Growth 159 (1-4) 156 (1996)
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Magnetic susceptibility calculation of semiconductor compounds AIIIBV in the MOLCAO approximation

N. N. Sirota and Ts. Z. Vitkina
Kristall und Technik 13 (7) 799 (1978)
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Tight-binding calculation of the properties of theFcenter and of isoelectronic defects in ZnS

P. Pêcheur, E. Kauffer and M. Gerl
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https://doi.org/10.1103/PhysRevB.14.4521

A polarizable point ion model for partially covalent semiconductors

W. Renn
Zeitschrift f�r Physik B Condensed Matter and Quanta 22 (4) 319 (1975)
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Strukturelle Deutung der Hochdrucktransformationen der Zink‐ und Cadmiumchalkogenide

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Cd displacement threshold in CdS at liquid‐helium temperatures

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Treatment of the electronic structure of the F+ centre in some 11‐VI semiconductors in an effective‐charge point‐ion‐lattice approximation

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Ionicité des liaisons interatomiques et distribution de la densité électronique dans les composés semiconducteurs III–V

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