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Article cité :
G. Le Bastard , R. Granger , S. Rolland , Y. Marqueton , R. Triboulet
J. Phys. France, 50 21 (1989) 3223-3232
Citations de cet article :
16 articles
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Surface properties of passivated
O Rousière, D Lemoine, A Quémerais, et al. Semiconductor Science and Technology 13 (6) 622 (1998) https://doi.org/10.1088/0268-1242/13/6/014
A comparison of force constants, mechanical and thermal properties in Hg1−xCdxTe and Hg1−xZnxTe mixed crystals
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A prediction of the electron mobility in medium gap HgCdTe and HgZnTe solid solutions
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The Travelling Heater Method (THM) for Hg1−xCdxTe and related materials
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Thermal Expansion Coefficient and Bond Strength in Hg1−xCdxTe and Hg1−xZnxTe
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Interface properties of passivated HgZnTe
K H Khelladi, D Lemoine, S Rolland, R Granger and R Triboulet Semiconductor Science and Technology 8 (1) 56 (1993) https://doi.org/10.1088/0268-1242/8/1/009
Low-temperature specific heat in Hg0.88Zn0.12Te
D Bagot, S Rolland, R Triboulet and R Granger Semiconductor Science and Technology 8 (5) 638 (1993) https://doi.org/10.1088/0268-1242/8/5/004
Electron mobility evaluation in Hg1−xCdxTe and Hg1−xZnxTe with two-optical-mode dispersion
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Acceptor Level in Narrow Gap Hg1−xZnx Te
A. Seyni, R. Granger, R. Triboulet, S. Rolland and A. Lasbley Physica Status Solidi (a) 128 (1) K27 (1991) https://doi.org/10.1002/pssa.2211280135
First design and characterization of HgZnTe optical waveguides
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Study of p-to-n-type conversion in bulk Hg1-xZnxTe near x = 0.15
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