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Article cité :
G. Allan , M. Lannoo
J. Phys. France, 44 12 (1983) 1355-1363
Citations de cet article :
32 articles
Materials Science and Technology
Michel Lannoo and Joachim Krüger Materials Science and Technology (2013) https://doi.org/10.1002/9783527603978.mst0242
Materials Science and Technology
David G. Pettifor Materials Science and Technology (2006) https://doi.org/10.1002/9783527603978.mst0002
Analytic bond-order potential for predicting structural trends across thesp-valent elements
Ralf Drautz, Dewey A. Murdick, Duc Nguyen-Manh, et al. Physical Review B 72 (14) (2005) https://doi.org/10.1103/PhysRevB.72.144105
Handbook of Semiconductor Technology
Michel Lannoo Handbook of Semiconductor Technology 1 (2000) https://doi.org/10.1002/9783527621842.ch1
Handbook of Semiconductor Technology Set
Michel Lannoo Handbook of Semiconductor Technology Set 1 (2000) https://doi.org/10.1002/9783527619290.ch1
Evolution of the Peierls distortion in liquid AsxSb1−x compounds
J.Y Raty, J.P Gaspard, R Céolin and R Bellissent Journal of Non-Crystalline Solids 232-234 59 (1998) https://doi.org/10.1016/S0022-3093(98)00484-0
Peierls instabilities in covalent structures I. Electronic structure, cohesion and theZ= 8 –Nrule
J.-P. Gaspard, A. Pellegatti, F. Marinelli and C. Bichara Philosophical Magazine B 77 (3) 727 (1998) https://doi.org/10.1080/13642819808214831
Lithium Insertion in Three-Dimensional Tin Sulfides
I. Lefebvre, M. Lannoo, M. Elidrissi Moubtassim, J. Olivier Fourcade and J.-C. Jumas Chemistry of Materials 9 (12) 2805 (1997) https://doi.org/10.1021/cm970139h
Concepts in Surface Physics
M.-C. Desjonquères and D. Spanjaard Concepts in Surface Physics 162 (1996) https://doi.org/10.1007/978-3-642-61400-2_5
Statics and Dynamics of Alloy Phase Transformations
Jürgen Hafner NATO ASI Series, Statics and Dynamics of Alloy Phase Transformations 319 269 (1994) https://doi.org/10.1007/978-1-4615-2476-2_21
Concepts in Surface Physics
M.-C. Desjonquères and D. Spanjaard Springer Series in Surface Sciences, Concepts in Surface Physics 30 145 (1993) https://doi.org/10.1007/978-3-642-97484-7_5
Excitons in silicon nanostructures
G Allan, C Delerue and M Lannoo Journal of Luminescence 57 (1-6) 239 (1993) https://doi.org/10.1016/0022-2313(93)90141-9
Optical Properties of Low Dimensional Silicon Structures
C. Delerue, G. Allan and M. Lannoo Optical Properties of Low Dimensional Silicon Structures 229 (1993) https://doi.org/10.1007/978-94-011-2092-0_27
Theory of optical properties of polysilanes: Comparison with porous silicon
G. Allan, C. Delerue and M. Lannoo Physical Review B 48 (11) 7951 (1993) https://doi.org/10.1103/PhysRevB.48.7951
Electronic structure of binary and ternary Ga or As oxides
E. A. Albanesi, S. J. Sferco, I. Lefebvre, G. Allan and G. Hollinger Physical Review B 46 (20) 13260 (1992) https://doi.org/10.1103/PhysRevB.46.13260
Valence band structure of TlSbS2crystals by angle-resolved photoemission
G Leveque, J Olivier-Fourcade and J C Jumas Journal of Physics: Condensed Matter 4 (3) 887 (1992) https://doi.org/10.1088/0953-8984/4/3/028
Theory of structural trends within the sp bonded elements
J C Cressoni and D G Pettifor Journal of Physics: Condensed Matter 3 (5) 495 (1991) https://doi.org/10.1088/0953-8984/3/5/001
Negative-Ucharacter of the adsorption on semiconductor surfaces: Application to metals on GaAs(110)
G. Allan and M. Lannoo Physical Review Letters 66 (9) 1209 (1991) https://doi.org/10.1103/PhysRevLett.66.1209
Surface core-level shifts and relaxation of group-IVA-element chalcogenide semiconductors
G. Allan Physical Review B 43 (12) 9594 (1991) https://doi.org/10.1103/PhysRevB.43.9594
Theoretical calculation of the electron-capture cross section due to a dangling bond at the Si(111)-SiO2interface
Didier Goguenheim and Michel Lannoo Physical Review B 44 (4) 1724 (1991) https://doi.org/10.1103/PhysRevB.44.1724
Electronic structure of yttrium oxide
F. Jollet, C. Noguera, N. Thromat, M. Gautier and J. P. Duraud Physical Review B 42 (12) 7587 (1990) https://doi.org/10.1103/PhysRevB.42.7587
Atomistic Simulation of Materials
A. T. Paxton Atomistic Simulation of Materials 327 (1989) https://doi.org/10.1007/978-1-4684-5703-2_34
The Structures of Binary Compounds
J.A. MAJEWSKI and P. VOGL Cohesion and Structure, The Structures of Binary Compounds 2 287 (1989) https://doi.org/10.1016/B978-0-444-87478-8.50008-6
Theoretical Mössbauer isomer shift of antimony chalcogenides
I. Lefebvre, M. Lannoo, G. Allan and L. Martinage Physical Review B 38 (13) 8593 (1988) https://doi.org/10.1103/PhysRevB.38.8593
Atomic configuration and electronic properties of the metastable state of theEL2 center in GaAs
C. Delerue and M. Lannoo Physical Review B 38 (6) 3966 (1988) https://doi.org/10.1103/PhysRevB.38.3966
Peierls Instabilities in Covalent Structures
J. P Gaspard, F Marinelli and A Pellegatti Europhysics Letters (EPL) 3 (10) 1095 (1987) https://doi.org/10.1209/0295-5075/3/10/007
Structural stability of silicon in tight-binding models
A T Paxton, A P Sutton and C M M Nex Journal of Physics C: Solid State Physics 20 (14) L263 (1987) https://doi.org/10.1088/0022-3719/20/14/001
Electronic Properties of Antimony Chalcogenides
I. Lefebvre, M. Lannoo, G. Allan, et al. Physical Review Letters 59 (21) 2471 (1987) https://doi.org/10.1103/PhysRevLett.59.2471
Relations Structures‐Propriétés Physiques dans quelques Semiconducteurs à Paire Électronique non liée
A. Ibanez, J. Olivier‐Fourcade, J. C. Jumas, E. Philippot and M. Maurin Zeitschrift für anorganische und allgemeine Chemie 540 (9-10) 106 (1986) https://doi.org/10.1002/zaac.19865400913
On the grain boundary segregation of sp‐valence impurities in B.C.C. transition metal
K. Masuda‐Jindo physica status solidi (b) 134 (2) 545 (1986) https://doi.org/10.1002/pssb.2221340212
On the electronic structure of molten Si
J. P. Gaspard, Ph. Lambin, C. Mouttet and J. P. Vigneron Philosophical Magazine B 50 (1) 103 (1984) https://doi.org/10.1080/13642818408238830
Credibility of different calculational schemes for defects in semiconductors: their power and their limits
M Lannoo Journal of Physics C: Solid State Physics 17 (18) 3137 (1984) https://doi.org/10.1088/0022-3719/17/18/006