Influence of interface charges on transport measurements in amorphous silicon films
J. Phys. France, 39 11 (1978) 1241-1246
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https://doi.org/10.1080/13642810208223162
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https://doi.org/10.1557/PROC-609-A17.3
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https://doi.org/10.1016/S0040-6090(96)09275-9
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https://doi.org/10.1080/01418639708243140
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https://doi.org/10.1557/PROC-467-3
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https://doi.org/10.1016/0925-4005(94)01628-U
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https://doi.org/10.1016/0167-9317(95)00096-Q
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https://doi.org/10.1103/PhysRevB.45.13314
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https://doi.org/10.1063/1.351539
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https://doi.org/10.1063/1.349007
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https://doi.org/10.1103/PhysRevB.43.14488
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https://doi.org/10.1063/1.347111
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https://doi.org/10.1103/PhysRevB.39.10196
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https://doi.org/10.1109/16.40945
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https://doi.org/10.1088/0268-1242/2/10/004
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https://doi.org/10.1002/pssb.2221430202
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https://doi.org/10.1051/jphys:01983004406071300
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https://doi.org/10.1063/1.93984
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https://doi.org/10.1080/13642812.1983.9728426
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https://doi.org/10.1016/0022-3093(83)90552-5
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https://doi.org/10.1016/0040-6090(83)90058-5
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https://doi.org/10.1063/1.331899
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https://doi.org/10.1088/0022-3719/16/34/010
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https://doi.org/10.1063/1.94169
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https://doi.org/10.1080/01418638208227449
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https://doi.org/10.1080/13642818208246405
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https://doi.org/10.1063/1.93498
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https://doi.org/10.1063/1.331339
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https://doi.org/10.1103/PhysRevB.25.5285
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https://doi.org/10.1103/PhysRevLett.48.421
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https://doi.org/10.1016/0165-1633(82)90057-0
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https://doi.org/10.1080/13642818208246437
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https://doi.org/10.1002/pssa.2210690130
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https://doi.org/10.1002/pssb.2221100115
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https://doi.org/10.1051/jphys:019820043090141900
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https://doi.org/10.1103/PhysRevB.25.5321
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https://doi.org/10.1103/PhysRevB.26.2041
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https://doi.org/10.1109/TR.1982.5221338
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https://doi.org/10.1063/1.93139
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https://doi.org/10.1080/01418638108225800
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https://doi.org/10.1103/PhysRevB.23.794
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https://doi.org/10.1103/PhysRevB.23.6648
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https://doi.org/10.1103/PhysRevB.24.5485
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https://doi.org/10.1080/01418638108222557