Articles citing this article

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Cited article:

The temperature dependence of optical gap and photoconductivity threshold in undoped hydrogenated amorphous silicon films

J. Tardy and R. Meaudre
Solid State Communications 39 (10) 1031 (1981)
https://doi.org/10.1016/0038-1098(81)90201-5

Direct Measurement of the Bulk Density of Gap States inn-Type Hydrogenated Amorphous Silicon

J. D. Cohen, D. V. Lang and J. P. Harbison
Physical Review Letters 45 (3) 197 (1980)
https://doi.org/10.1103/PhysRevLett.45.197

Cellules solaires : quelques aspects des structures « Schottky » à base de silicium amorphe hydrogéné

A. Deneuville, J.C. Bruyère, A. Mini, H. Hamdi and H. Kahil
Revue de Physique Appliquée 15 (2) 233 (1980)
https://doi.org/10.1051/rphysap:01980001502023300

Silane dissociation mechanisms and thin film formation in a low pressure multipole dc discharge

B. Drevillon, J. Huc, A. Lloret, J. Perrin, G. de Rosny and J. P. M. Schmitt
Applied Physics Letters 37 (7) 646 (1980)
https://doi.org/10.1063/1.92008

Thickness dependence of the photoconductivity of phosphorus-doped hydrogenated amorphous silicon

I. Solomon and M. H. Brodsky
Journal of Applied Physics 51 (8) 4548 (1980)
https://doi.org/10.1063/1.328400

Optically induced conductivity changes in discharge-produced hydrogenated amorphous silicon

D. L. Staebler and C. R. Wronski
Journal of Applied Physics 51 (6) 3262 (1980)
https://doi.org/10.1063/1.328084

Light-induced effects in Schottky diodes on hydrogenated amorphous silicon

D. Jousse, R. Basset, S. Delionibus and B. Bourdon
Applied Physics Letters 37 (2) 208 (1980)
https://doi.org/10.1063/1.91827

Field effect measurement on the film-substrate and film-vacuum interfaces of a-Si:H

S. Guha, K. L. Narasimhan, R. V. Navkhandewala and S. M. Pietruszko
Applied Physics Letters 37 (6) 572 (1980)
https://doi.org/10.1063/1.91788

Thickness and temperature dependence of the conductivity of phosphorus-doped hydrogenated amorphous silicon

D. G. Ast and M. H. Brodsky
Philosophical Magazine B 41 (3) 273 (1980)
https://doi.org/10.1080/13642818008245385

Determination of surface states distribution in a-Si:H using MOS tunnel Junctions

I. Balberg
Journal of Electronic Materials 9 (4) 797 (1980)
https://doi.org/10.1007/BF02652897

Analysis of field-effect and capacitance–voltage measurements in amorphous semiconductors

Nancy B. Goodman and H. Fritzsche
Philosophical Magazine B 42 (1) 149 (1980)
https://doi.org/10.1080/01418638008225645