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Article cité :
I. Solomon , T. Dietl , D. Kaplan
J. Phys. France, 39 11 (1978) 1241-1246
Citations de cet article :
128 articles | Pages :
Thickness dependence of hydrogen in a-Si : H films deposited on c-Si
J.F. Currie, P. Depelsenaire, S. Galarneau, et al. Journal de Physique Lettres 42 (15) 373 (1981) https://doi.org/10.1051/jphyslet:019810042015037300
The temperature dependence of optical gap and photoconductivity threshold in undoped hydrogenated amorphous silicon films
J. Tardy and R. Meaudre Solid State Communications 39 (10) 1031 (1981) https://doi.org/10.1016/0038-1098(81)90201-5
On light‐induced effect in amorphous hydrogenated silicon
S. Guha, K. L. Narasimhan and S. M. Pietruszko Journal of Applied Physics 52 (2) 859 (1981) https://doi.org/10.1063/1.328849
Determination of the density of gap states: field effect and surface adsorption
H. Fritzsche Solar Cells 2 (3) 289 (1980) https://doi.org/10.1016/0379-6787(80)90033-2
Amorphous hydrogenated silicon films prepared from a glowdischarge
S Guha Bulletin of Materials Science 2 (5) 317 (1980) https://doi.org/10.1007/BF02908578
Conductivity and temperature dependence of the optical gap in hydrogenated amorphous silicon
J. Perrin and I. Solomon Journal of Non-Crystalline Solids 37 (3) 407 (1980) https://doi.org/10.1016/0022-3093(80)90076-9
Thickness dependent conductivity of n-type hydrogenated amorphous silicon
D.G. Ast and M.H. Brodsky Journal of Non-Crystalline Solids 35-36 611 (1980) https://doi.org/10.1016/0022-3093(80)90662-6
Field effect measurement on the film-substrate and film-vacuum interfaces of a-Si:H
S. Guha, K. L. Narasimhan, R. V. Navkhandewala and S. M. Pietruszko Applied Physics Letters 37 (6) 572 (1980) https://doi.org/10.1063/1.91788
States in the gap in non-crystalline semiconductors
N F Mott Journal of Physics C: Solid State Physics 13 (30) 5433 (1980) https://doi.org/10.1088/0022-3719/13/30/011
Determination of states distribution in hydrogenated amorphous silicon usingMIStunnel junctions
I. Balberg Physical Review B 22 (8) 3853 (1980) https://doi.org/10.1103/PhysRevB.22.3853
Thickness dependence of the photoconductivity of phosphorus-doped hydrogenated amorphous silicon
I. Solomon and M. H. Brodsky Journal of Applied Physics 51 (8) 4548 (1980) https://doi.org/10.1063/1.328400
Direct Measurement of the Bulk Density of Gap States inn-Type Hydrogenated Amorphous Silicon
J. D. Cohen, D. V. Lang and J. P. Harbison Physical Review Letters 45 (3) 197 (1980) https://doi.org/10.1103/PhysRevLett.45.197
Thickness and temperature dependence of the conductivity of phosphorus-doped hydrogenated amorphous silicon
D. G. Ast and M. H. Brodsky Philosophical Magazine B 41 (3) 273 (1980) https://doi.org/10.1080/13642818008245385
Optically induced conductivity changes in discharge-produced hydrogenated amorphous silicon
D. L. Staebler and C. R. Wronski Journal of Applied Physics 51 (6) 3262 (1980) https://doi.org/10.1063/1.328084
Amorphous semiconducting Si:H
H Fritzsche Bulletin of Materials Science 2 (5) 295 (1980) https://doi.org/10.1007/BF02908577
Silane dissociation mechanisms and thin film formation in a low pressure multipole dc discharge
B. Drevillon, J. Huc, A. Lloret, J. Perrin, G. de Rosny and J. P. M. Schmitt Applied Physics Letters 37 (7) 646 (1980) https://doi.org/10.1063/1.92008
Characterized of glow-discharge deposited a-Si:H
H. Fritzsche Solar Energy Materials 3 (4) 447 (1980) https://doi.org/10.1016/0165-1633(80)90001-5
Ohmic contacts on sputtered a-Si : H
J.C. Bruyère and A. Deneuville Journal de Physique Lettres 41 (2) 27 (1980) https://doi.org/10.1051/jphyslet:0198000410202700
Cellules solaires : quelques aspects des structures « Schottky » à base de silicium amorphe hydrogéné
A. Deneuville, J.C. Bruyère, A. Mini, H. Hamdi and H. Kahil Revue de Physique Appliquée 15 (2) 233 (1980) https://doi.org/10.1051/rphysap:01980001502023300
Effect of a hydrogen plasma on various a-Si : Hx structures at low temperatures
J.C. Bruyère and A. Deneuville Journal de Physique Lettres 41 (2) 31 (1980) https://doi.org/10.1051/jphyslet:0198000410203100
Comparison of dc and hf plasma treatments for hydrogenation of amorphous silicon
P.A. Thomas Revue de Physique Appliquée 15 (2) 241 (1980) https://doi.org/10.1051/rphysap:01980001502024100
Analysis of field-effect and capacitance–voltage measurements in amorphous semiconductors
Nancy B. Goodman and H. Fritzsche Philosophical Magazine B 42 (1) 149 (1980) https://doi.org/10.1080/01418638008225645
Light-induced effects in Schottky diodes on hydrogenated amorphous silicon
D. Jousse, R. Basset, S. Delionibus and B. Bourdon Applied Physics Letters 37 (2) 208 (1980) https://doi.org/10.1063/1.91827
Recent developments in amorphous silicon solar cells
D.E. Carlson Solar Energy Materials 3 (4) 503 (1980) https://doi.org/10.1016/0165-1633(80)90002-7
Determination of surface states distribution in a-Si:H using MOS tunnel Junctions
I. Balberg Journal of Electronic Materials 9 (4) 797 (1980) https://doi.org/10.1007/BF02652897
2nd E.C. Photovoltaic Solar Energy Conference
M. G. Hack and W. I. Milne 2nd E.C. Photovoltaic Solar Energy Conference 278 (1979) https://doi.org/10.1007/978-94-009-9487-4_33
Photoconductive resonance in silicon: Theory and experiment
G. Mendz, D. J. Miller and D. Haneman Physical Review B 20 (12) 5246 (1979) https://doi.org/10.1103/PhysRevB.20.5246
Photo-induced changes in glow-discharge-deposited amorphous silicon: The Staebler-Wronski effect
S. R. Elliott Philosophical Magazine B 39 (4) 349 (1979) https://doi.org/10.1080/13642817908246356
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