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Article cité :
M. Lannoo
J. Phys. France, 34 10 (1973) 869-878
Citations de cet article :
18 articles
Materials Science and Technology
Michel Lannoo and Joachim Krügerhttps://doi.org/10.1002/9783527603978.mst0242
Handbook of Semiconductor Technology Set
Michel Lannoohttps://doi.org/10.1002/9783527619290.ch1
Handbook of Semiconductor Technology
Michel Lannoohttps://doi.org/10.1002/9783527621842.ch1
Computer Aided Innovation of New Materials
K. MASUDA-JINDO, V.K. TEWARY and R. THOMSONhttps://doi.org/10.1016/B978-0-444-88864-8.50132-1
Atomic theory of fracture of brittle materials: Application to covalent semiconductors
K. Masuda-Jindo, V.K. Tewary and Robb Thomson6 (7) 1553 (1991)https://doi.org/10.1557/JMR.1991.1553
Medium-range order and cohesive energy in Ge x Se 1-x glasses
P. Tronc51 (7) 675 (1990)https://doi.org/10.1051/jphys:01990005107067500
Structures and Energies of Symmetrical 〈011〉 Tilt Grain Boundaries in Silicon
M. Kohyama, R. Yamamoto and M. Doyama137 (1) 11 (1986)https://doi.org/10.1002/pssb.2221370102
Reconstructed Structures of Symmetrical 〈011〉 Tilt Grain Boundaries in Silicon
M. Kohyama, R. Yamamoto and M. Doyama138 (2) 387 (1986)https://doi.org/10.1002/pssb.2221380202
Calculation of Core Structure and Core Energy of Screw and 60° Dislocations in Si: Tight-Binding Method
Kin-ichi Masuda and Kenichi Kojima51 (5) 1510 (1982)https://doi.org/10.1143/JPSJ.51.1510
Calculation of atomic relaxation near the (111) 1 × 1 surface of covalent semiconductors: Tight‐binding Green's function approach
K. Masuda107 (2) 529 (1981)https://doi.org/10.1002/pssb.2221070217
Trends in the band structure of defect tetrahedral compound semiconductors : oxides and other systems with 4-2 local coordination
M. Bensoussan and M. Lannoo40 (8) 749 (1979)https://doi.org/10.1051/jphys:01979004008074900
Amorphous Semiconductors
B. Kramer and D. Weaire36 9 (1979)https://doi.org/10.1007/3-540-16008-6_156
Surface and interface states of (111) faces of semiconductors
B. Djafari-Rouhani, L. Dobrzynski and M. Lannoo78 (1) 24 (1978)https://doi.org/10.1016/0039-6028(78)90207-8
Dangling bond surfaces states in (111) faces of zinc-blende compounds
B. Djafari-Rouhani, L. Dobrzynski, F. Florès, M. Lannoo and C. Tejedor27 (1) 29 (1978)https://doi.org/10.1016/0038-1098(78)91044-X
Bonds and band structure inGexSe1−xcompounds
M. Lannoo and M. Bensoussan16 (8) 3546 (1977)https://doi.org/10.1103/PhysRevB.16.3546
A tight-binding calculation of the chemical shift in trigonal selenium and tellurium
M. Bensoussan and M. Lannoo38 (8) 921 (1977)https://doi.org/10.1051/jphys:01977003808092100
Electronic structure based on the local atomic environment for tight-binding bands. II
R Haydock, V Heine and M J Kelly8 (16) 2591 (1975)https://doi.org/10.1088/0022-3719/8/16/011
Self-consistent procedure for point defects in tight-binding systems: Application to semiconductors
M. Lannoo10 (6) 2544 (1974)https://doi.org/10.1103/PhysRevB.10.2544
