EDP Sciences logo
Authentification abonné
Rechercher
Menu

Article cité par

La fonctionnalité Article cité par… liste les citations d'un article. Ces citations proviennent de la base de données des articles de EDP Sciences, ainsi que des bases de données d'autres éditeurs participant au programme CrossRef Cited-by Linking Program. Vous pouvez définir une alerte courriel pour être prévenu de la parution d'un nouvel article citant " cet article (voir sur la page du résumé de l'article le menu à droite).

Article cité :

Calculation of Core Structure and Core Energy of Screw and 60° Dislocations in Si: Tight-Binding Method

Kin-ichi Masuda and Kenichi Kojima
Journal of the Physical Society of Japan 51 (5) 1510 (1982)
https://doi.org/10.1143/JPSJ.51.1510

Calculation of atomic relaxation near the (111) 1 × 1 surface of covalent semiconductors: Tight‐binding Green's function approach

K. Masuda
physica status solidi (b) 107 (2) 529 (1981)
https://doi.org/10.1002/pssb.2221070217

Linear-combination-of-atomic-orbitals, self-consistent-field method for the determination of the electronic structure of deep levels in semiconductors

M. Astier, N. Pottier and J. C. Bourgoin
Physical Review B 19 (10) 5265 (1979)
https://doi.org/10.1103/PhysRevB.19.5265

Chemical pseudopotential approach to covalent bonding. II. Bond lengths and bond energies in diamond, silicon and graphite

D W Bullett
Journal of Physics C: Solid State Physics 8 (17) 2707 (1975)
https://doi.org/10.1088/0022-3719/8/17/010

Simple Tight-Binding Calculation of the Transverse Effective Charges in III-V, II-VI, and IV-IV Compound Semiconductors

M. Lannoo and J. N. Decarpigny
Physical Review B 8 (12) 5704 (1973)
https://doi.org/10.1103/PhysRevB.8.5704

Dynamics of Fluids near the Critical Point: Decay Rate of Order-Parameter Fluctuations

Harry L. Swinney and Donald L. Henry
Physical Review A 8 (5) 2586 (1973)
https://doi.org/10.1103/PhysRevA.8.2586