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Article cité :
F. Bailly
J. Phys. France, 27 5-6 (1966) 335-341
Citations de cet article :
36 articles
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Solid state recrystallization: a promising technique for the growth of semiconductor materials
R. Triboulet38 (3-5) 215 (2003)https://doi.org/10.1002/crat.200310026
Preferred [1 1 1] growth of ZnSe crystals from the vapor due to repeated twinning
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Growth by solid phase recrystallization and assessment of large ZnSe crystals of high purity and structural perfection
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The growth of bulk ZnSe crystals
R Triboulet6 (9A) A18 (1991)https://doi.org/10.1088/0268-1242/6/9A/004
Alternative small gap materials for IR detection
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(Hg,Zn)Te: A new material for IR detection
R. Triboulet86 (1-4) 79 (1988)https://doi.org/10.1016/0022-0248(90)90702-M
Point defects in II–VI compounds
T. Taguchi and B. Ray6 (2) 103 (1983)https://doi.org/10.1016/0146-3535(83)90002-3
Covalent bonding effect on magnetic susceptibility in AIIIBV semiconductor compounds
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Magnetic susceptibility calculation of semiconductor compounds AIIIBV in the MOLCAO approximation
N. N. Sirota and Ts. Z. Vitkina13 (7) 799 (1978)https://doi.org/10.1002/crat.19780130711
Diamagnetism and chemical bonds in semiconductors
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Punktdefekte und Überstrukturerscheinungen in CdSe‐Epitaxieschichten
L. Däweritz11 (7) 745 (1976)https://doi.org/10.1002/crat.19760110707
Tight-binding calculation of the properties of theFcenter and of isoelectronic defects in ZnS
P. Pêcheur, E. Kauffer and M. Gerl14 (10) 4521 (1976)https://doi.org/10.1103/PhysRevB.14.4521
A polarizable point ion model for partially covalent semiconductors
W. Renn22 (4) 319 (1975)https://doi.org/10.1007/BF01312801
Point Defects in Solids
James W. Corbett and Jacques C. Bourgoinhttps://doi.org/10.1007/978-1-4684-0904-8_1
Strukturelle Deutung der Hochdrucktransformationen der Zink‐ und Cadmiumchalkogenide
H.‐J. Bautsch and L. Däweritz8 (1-3) 193 (1973)https://doi.org/10.1002/crat.19730080119
Disorder annealing in III–V semiconductors after ion implantation at low temperatures
S. T. Picraux17 (3-4) 261 (1973)https://doi.org/10.1080/00337577308232623
Kristallographische Polarität von AIIIBV ‐ Mischkristallen
W. Schmidt, B. Pilgermann, G. Kühn and P. Fischer8 (8) 913 (1973)https://doi.org/10.1002/crat.19730080804
Threshold energy for tellurium displacement in zinc telluride
F J Bryant and A T J Baker5 (16) 2283 (1972)https://doi.org/10.1088/0022-3719/5/16/029
Nuclear magnetic resonance chemical shifts in CdS, CdSe, and CdTe
D. C. Look50 (2) (1972)https://doi.org/10.1002/pssb.2220500249
Cd displacement threshold in CdS at liquid‐helium temperatures
C. N. Elsby and J. M. Meese43 (11) 4818 (1972)https://doi.org/10.1063/1.1661023
Zur Abschätzung physikalischer und physikalisch‐chemischer Daten von AlBV‐Verbindungen mit Zinkblendestruktur
G. Kühn, A. Leonhardt and K. Hübner7 (10) 1077 (1972)https://doi.org/10.1002/crat.19720071002
III-V compound review
F. H. Eisen9 (3-4) 235 (1971)https://doi.org/10.1080/00337577108231053
Zn Displacement Threshold in ZnTe
J.M. Meese19 (4) 86 (1971)https://doi.org/10.1063/1.1653845
Treatment of the electronic structure of the F+ centre in some 11‐VI semiconductors in an effective‐charge point‐ion‐lattice approximation
D. Wruck48 (1) 181 (1971)https://doi.org/10.1002/pssb.2220480117
Crystal Chemistry and Semiconduction in Transition Metal Binary Compounds
J.P. SUCHEThttps://doi.org/10.1016/B978-0-12-675650-0.50006-X
Ionicité des liaisons interatomiques et distribution de la densité électronique dans les composés semiconducteurs III–V
F. Bailly45 (1) 195 (1971)https://doi.org/10.1002/pssb.2220450121
Spin‐Bahn‐Aufspaltung und chemische Bindung in AIIIBV‐Halbleitern
K. Hübner480 (1) 97 (1970)https://doi.org/10.1002/andp.19704800109
Ionicities, effective charges, dielectric constants, and atomic polarizabilities of III–V semiconductors
K. Hübner31 (7) 365 (1970)https://doi.org/10.1016/0375-9601(70)90986-2
Spin‐Bahn‐Aufspaltung und chemische Bindung in AIIBVI‐Halbleitern
K. Hübner480 (1) 106 (1970)https://doi.org/10.1002/andp.19704800110
Determination of the Gradient-Elastic Tensors forAIIIBVCompounds Using Nuclear Acoustic Resonance
R. K. Sundfors177 (3) 1221 (1969)https://doi.org/10.1103/PhysRev.177.1221
Energies of Formation of Metal Vacancies in II‐VI Semiconducting Tellurides (HgTe, CdTe, ZnTe)
F. Bailly25 (1) 317 (1968)https://doi.org/10.1002/pssb.19680250130
Atomic displacement energies for binary semiconductors
F J Bryant and A F J Cox1 (6) 1734 (1968)https://doi.org/10.1088/0022-3719/1/6/331
Some remarks on the antishielding effect in iii‐v compounds
V. K. Bashenov, V. A. Presnov and S. P. Fedotov25 (1) (1968)https://doi.org/10.1002/pssb.19680250159
