J. Phys. France 51, 1-4 (1990)
DOI: 10.1051/jphys:019900051010100
Intensity-dependent absorption coefficient and refractive index near the band gap of highly excited semiconductors
Nguyen Ba AnCentre for Theoretical Physics, Academy of Sciences of Vietnam, Nghia Do, Tu Liem, Ha Noi, Vietnam
Abstract
The dependence of absorption coefficient α and refractive index n on the intensity of incident light are studied near the exciton resonance. The non-boson behaviour of excitons may serve as a mechanism of optical nonlinearity leading to bistable shapes of α and n above the resonance.
Résumé
Nous étudions la dépendance du coefficient d'absorption α et de l'indice de réfraction n en fonction de l'intensité de lumière incidente au voisinage de la résonance excitonique. Le comportement non-bosonique des excitons peut constituer un mécanisme de non-linéarité optique conduisant à des formes bistables de α et n au-dessus de cette résonance.
7820C - Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity).
7135 - Excitons and related phenomena.
4265 - Nonlinear optics.
Key words
excitons -- light absorption -- nonlinear optics -- optical constants -- refractive index -- semiconductors